The BFP740 is a high-performance, low noise silicon germanium bipolar RF transistor designed for wideband applications up to 11 GHz. It features very low noise figure, high linearity, and is ideal for low power consumption in mobile, WLAN, Wi-Fi, satellite, and 3G/4G LTE systems. Encased in a compact, easy-to-use plastic package, it supports voltages up to 4.0 V and currents up to 45 mA, making it suitable for high-frequency amplification and RF front-end modules requiring reliable and energy-efficient operation.
Minimum Noise Figure: 0.45 dB at 0.45 GHz, 0.85 dB at 5.5 GHz
Gain: up to 19.5 dB at 5.5 GHz, 22 dB at 2.4 GHz
Temperature Range: -55°C to 150°C
Package: SOT343, RoHS compliant, halogen-free
Maximum Voltage: Collector-Emitter up to 4.0 V
Maximum Collector Current: 45 mA
Total Power Dissipation: 160 mW
Junction Temperature: 150°C
Buy the Infineon BFP740 – Reliable Low Noise RF Transistor for Industrial Applications
Order the BFP740 RF transistor today and enhance your wireless communication, satellite, and LTE systems with superior low noise, high linearity, and energy-efficient operation. Perfect for mobile, WLAN, Wi-Fi, and high-frequency RF applications, this reliable device delivers outstanding performance up to 11 GHz, housed in a RoHS-compliant SOT343 package. Ensure your designs meet modern standards for low power consumption and high linearity by purchasing the BFP740 online now and benefit from fast delivery and excellent support.
Buy Infineon BFP740 now and experience unmatched reliability and high-frequency performance in your RF and communication projects.
Frequently Asked Questions
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