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INFINEON IPB017N10N5ATMA1 Power MOSFET

The Infineon OptiMOS 5 Power-Transistor is a high-performance N-channel MOSFET designed for efficient high-frequency switching and synchronous rectification. It features extremely low on-resistance, high pulsed and continuous drain currents, and excellent avalanche energy handling, making it ideal for power supply, motor control, and telecom applications. The device is 100% avalanche tested, Pb-free, RoHS compliant, and qualified according to JEDEC standards, ensuring reliability in demanding environments. Its thermal characteristics include low thermal resistance, supporting effective heat dissipation for stable operation.

Authorized Distributors
Source:Newark
Part No:IPB017N10N5ATMA1
Stock:389
Inv Date:05-29-2026
Price: Unit price: $6.99
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Source:DigiKey
Part No:IPB017N10N5ATMA1
Stock:785
Inv Date:05-29-2026
Price: Unit price: $7.79
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Part No:IPB017N10N5ATMA1
Stock:13142
Inv Date:05-30-2026
Price: Unit price: $6.67
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Part No:IPB017N10N5ATMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $2.85
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Source:Arrow EU
Part No:IPB017N10N5ATMA1
Stock:1000
Inv Date:05-30-2026
Price: N/A
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Part No:IPB017N10N5ATMA1
Stock:190
Inv Date:05-30-2026
Price: N/A
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INFINEON IPB017N10N5ATMA1 Power MOSFET Specifications:

  • Maximum drain-source voltage Vds: 100 V
  • Continuous drain current Id: 180 A at Tc=25°C
  • Pulsed drain current Ipd: 720 A at Tc=25°C
  • Avalanche energy Esa: 1166 mJ at Ib=100 A
  • Gate-source voltage Vgs: -20 V to +20 V
  • Power dissipation Pd: 375 W at Tc=25°C
  • Operating and storage temperature Tj, Tstg: -55°C to +175°C
  • Thermal resistance junction-case Rθjc: 0.3-0.4 K/W
  • Thermal resistance junction-ambient Rθja: 62-40 K/W
  • Soldering temperature (reflow): 260°C
  • Drain-source breakdown voltage Vds: 100 V
  • Gate threshold voltage Vgs(th): 2.2 V to 3.8 V
  • On-state resistance Rds(on): 17-22 mΩ
  • Gate charge Qg: 168-210 nC
  • Total output charge Qoss: 213-283 nC
  • Diode forward voltage Vf: 0.9-1.2 V at 100 A
  • Reverse recovery time trr: 88-176 ns

Buy the Infineon Series OptiMOS Power Transistor: 100 V N-Channel MOSFET

Order the Infineon Power MOSFET online today and benefit from rapid delivery, proven quality, and superior performance in your power conversion and switching projects. Designed for high current capacity, low Rds(on), and high avalanche energy, this device ensures efficiency and durability for demanding industrial and electronics applications. Source from authorized distributors easily, with detailed specifications supporting your design choices. Enhance your power electronics with this reliable, high-performance transistor—buy now and unlock optimal operational stability and efficiency.

Buy Infineon IPB017N10N5N5 now and experience unmatched reliability and performance in high-frequency power switching.

Frequently Asked Questions

Where can I buy INFINEON IPB017N10N5ATMA1?

You can click on the BUY or RFQ button to purchase IPB017N10N5ATMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IPB017N10N5ATMA1?

You can download the IPB017N10N5ATMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IPB017N10N5ATMA1?

INFINEON

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