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INFINEON IPL60R104C7AUMA1 High Voltage Power Transistor

The product features the innovative 600V CoolMOS C7 Power Transistor from Infineon, designed based on superjunction technology for high efficiency and reliability. Suitable for hard and soft switching applications such as PFC, LLC, server power supplies, telecom, and solar systems, it offers increased dv/dt ruggedness up to 120V/ns, superior FOM Rosjon*Eoss and Rosjon*Qg, and high power density with small packaging. Qualified for industrial-grade applications, it ensures optimized PCB assembly, higher efficiency, and increased system reliability. This transistor enhances system performance in high-voltage, high-power environments, providing lower switching losses and enabling faster switching speeds.

Authorized Distributors
Source:DigiKey
Part No:IPL60R104C7AUMA1
Stock:74
Inv Date:05-29-2026
Price: Unit price: $2.49018
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Part No:IPL60R104C7AUMA1
Stock:2712
Inv Date:05-30-2026
Price: Unit price: $6.22
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Part No:IPL60R104C7AUMA1
Stock:3000
Inv Date:05-29-2026
Price: Unit price: $4.85
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Source:Arrow EU
Part No:IPL60R104C7AUMA1
Stock:3000
Inv Date:05-30-2026
Price: N/A
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INFINEON IPL60R104C7AUMA1 High Voltage Power Transistor Specifications:

  • Drain-source breakdown voltage: 600V
  • Maximum continuous drain current: 35A
  • Pulsed drain current: 83A
  • Avalanche energy, single pulse: 97mJ
  • Avalanche energy, repetitive: 0.49mJ
  • dv/dt ruggedness: 120V/ns
  • Gate-source voltage static: ±20V
  • Gate-source voltage dynamic: ±30V
  • Power dissipation: 122W
  • Storage temperature: -40°C to +150°C
  • Operating junction temperature: -40°C to +150°C
  • Thermal resistance junction-case: 1.026°C/W
  • Thermal resistance junction-ambient: 62°C/W
  • Reflow soldering temperature: 260°C
  • Gate threshold voltage: 3.5V (max)
  • Drain-source on resistance Rds(on): as specified
  • Gate charge: 42nC total
  • Reverse diode forward voltage: 0.9V
  • Reverse recovery time: 350ns
  • Peak reverse recovery current: 27A

Buy the Infineon Series C7 600V MOSFET: IPL60R104C7

Upgrade your power management systems with the high-voltage, highly efficient Power Transistor featuring advanced superjunction technology. Designed for demanding applications such as server power supplies, telecom, and solar inverters, it offers excellent switching performance, rugged dv/dt capability, and compact packaging for easy integration. Ideal for both industrial and high-performance environments, this device ensures lower switching losses, enhanced system reliability, and increased power density. Order online today to optimize your system efficiency and performance with our reliable high-voltage MOSFET solution.

Buy Infineon IPL60R104C7 high-voltage power transistor now and experience unmatched reliability and performance for your industrial and power applications.

Frequently Asked Questions

Where can I buy INFINEON IPL60R104C7AUMA1?

You can click on the BUY or RFQ button to purchase IPL60R104C7AUMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IPL60R104C7AUMA1?

You can download the IPL60R104C7AUMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IPL60R104C7AUMA1?

INFINEON

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