The IRFB7434PbF is a fully characterized HEXFET® Power MOSFET designed for high-current switching applications including motor drives, power supplies, and inverters. With an avalanche energy of 490 mJ for single pulses and a continuous drain current of 3170 A at Tc = 25°C, it offers excellent ruggedness and reliability. The device features low on-resistance, enhanced gate charge characteristics, and is RoHS compliant and halogen-free. Its TO-220AB package facilitates easy mounting and thermal management for demanding industrial and power electronics applications.
INFINEON IRFB7434PBF High-Current Power MOSFET Specifications:
Maximum Drain Current: 3170 A at Tc = 25°C, 2240 A at Tc = 100°C
Vds Breakdown Voltage: 40 V
Gate-to-Source Voltage: +20 V (max)
Continuous Drain Current: 3170 A at Tc = 25°C
Power Dissipation: 294 W
Thermal Resistance Junction-to-Case: 0.51 °C/W
Junction-to-Ambient Resistance: 62 °C/W
Single Pulse Avalanche Energy: 490 mJ
Gate Threshold Voltage: 2.2 V (min), 3.0 V (typ)
On-Resistance: Typical 16 mΩ at Vgs = 10 V
Temperature Range: -55°C to +175°C
Soldering Temperature (10 sec): 300°C
Package: TO-220AB
RoHS Compliant, Halogen-Free
Buy the Infineon IRFB7434PbF – Reliable HEXFET® Power MOSFET for Industrial Applications
Purchase the Infineon IRFB7434PbF Power MOSFET online now to benefit from its excellent ruggedness, low on-resistance, and high avalanche energy. Ideal for motor drives, power supplies, and inverter circuits. This RoHS-compliant, halogen-free device features a TO-220AB package for easy mounting and thermal management. With a continuous drain current of up to 3170 A and maximum Vds of 40 V, it ensures reliable performance in high-power industrial applications. Secure your supply chain with quick online ordering and deliver dependable power solutions.
Order your Infineon IRFB7434PbF Power MOSFET today and enhance your power electronics with this rugged, high-current, and RoHS-compliant device designed for demanding industrial projects.
Frequently Asked Questions
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