The StrongIRFET 2 Power-Transistor is optimized for high-current, high-voltage switching applications. This N-channel MOSFET features a drain-source breakdown voltage of 100 V and a continuous drain current of 140 A. It is 100% avalanche tested, ensuring robustness in demanding environments. The device offers a low on-resistance of 3.2 mΩ at 6 V, making it ideal for efficient power management. Its thermal characteristics include a thermal resistance of 0.6 °C/W junction-to-case, suitable for compact cooling solutions. Certified RoHS, Halogen-free, and JEDEC-qualified, it guarantees quality and environmental compliance for industrial and automotive uses.
INFINEON IPP026N10NF2SAKMA1 Power Transistor Specifications:
Drain-Source Breakdown Voltage: 100 V
Continuous Drain Current: 140 A at 25°C
Pulsed Drain Current: 736 A
Gate-Source Voltage: ±20 V
On-Resistance: 3.2 mΩ at Vgs=6 V
Avalanche Energy: 430 mJ
Power Dissipation: 38 W at 25°C
Thermal Resistance Junction to Case: 0.6 °C/W
Operating and Storage Temperature Range: -55°C to +175°C
Peak reverse diode current: 150 A
Diode Forward Voltage: 0.9 to 1.2 V at 100 A
Device is RoHS compliant and JEDEC qualified
Buy the Buy Infineon StrongIRFET 2 Power-Transistor Part Number IPP026N10NF2S online
Enhance your power management solutions with the Infineon StrongIRFET 2 Power-Transistor. Designed for high efficiency and durability, this N-channel MOSFET offers a drain-source voltage of 100 V and continuous drain current of 140 A. Its low on-resistance and excellent thermal performance ensure energy savings and reliable operation. Ideal for industrial, automotive, and high-current switching applications, it is RoHS compliant, JEDEC-qualified, and rigorously tested. Purchase online now to leverage advanced power transistor technology with confidence and streamline your design process.
Order your Infineon SeriesIPPO26N10NF2S high-current MOSFET today and ensure reliable, efficient power switching for your industrial or automotive projects.
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