The Infineon OptiMOS 5 Power-Transistor with 80 V capability is ideal for high-frequency switching and synchronization applications. It features very low on-resistance, excellent gate charge performance (Qoss 82 nc), and is 100% avalanche tested. The N-channel, normal-level device is RoHS compliant with a Pb-free plating. It offers a continuous drain current of 111 A at 25°C, pulsed drain currents up to 480 A, and heat resistance of 0.7 to 0.9 KW junction to case. Its robust thermal and electrical characteristics make it suitable for power management in complex electronic systems.
INFINEON IPP034N08N5AKSA1 Power Transistor Specifications:
Voltage Rating: 80 V
Continuous Drain Current: 111 A at Tj=25°C
Pulsed Drain Current: 480 A at Tc=25°C
Gate Threshold Voltage: 2.2 V to 3.8 V
Drain-Source Breakdown Voltage: 80 V
Gate Charge (Qoss): 82 Nc
On-Resistance (Rds(on)): 44 mΩ at Vgs=6 V
Thermal Resistance, Junction to Case: 0.7 to 0.9 KW
Operating and Storage Temperature Range: -55°C to +175°C
Power Dissipation: 167 W at Tc=25°C
Package Type: TO-220-3
Avalanche Energy: 186 mJ
Max. Gate-Source Voltage: ±20 V
Soldering Temperature (Wave/Smt Reflow): 260°C
RoHS Compliant, Pb-free plating
Buy the Buy Infineon Power Transistor Part Number IPP034N08N5 Online
Enhance your power management systems with the Infineon Power Transistor offering 80 V, low on-resistance, and high pulsed current capacity. This device is ideal for high-frequency switching and synchronization tasks, providing excellent gate charge performance and reliable avalanche testing. Its robust thermal characteristics support high power dissipation up to 167 W, making it suitable for demanding electronic applications. Easily order online to ensure reliable, high-quality power switching components for your circuit designs and power supply projects.
Order your Infineon SeriesIPPO34NO8N5 80 V Power MOSFET today and enhance your power switching efficiency with this high-performance, low Rds(on) device.
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