The StrongIRFET 2 Power-Transistor is an N-channel power MOSFET designed for high-current switching applications. It features a breakdown voltage of 80 V, low Rds(on) of 26 mΩ at 6 V gate voltage, and a continuous drain current of 128 A. Its avalanche energy of 303 mJ and pulsed drain current of 728 A make it suitable for demanding power management tasks. The device is rugged, 100% avalanche tested, RoHS compliant, halogen-free, and qualified according to JEDEC standards, ensuring reliable performance in various industrial power circuits.
INFINEON IPP024N08NF2SAKMA1 Power MOSFET Specifications:
Drain-Source Breakdown Voltage: 80 V
Continuous Drain Current: 128 A
Pulsed Drain Current: 728 A
Rds(on): 26 mΩ at Vgs=6 V
Avalanche Energy (single pulse): 303 mJ
Gate-Source Voltage: ±20 V
Gate Threshold Voltage: 2.2 V (min), 3.8 V (max)
Thermal Resistance, Junction-Case: 0.7 °C/W
Operating Temperature Range: -55°C to 175°C
Power Dissipation: 3.8 W
Dimensions: 15.80 mm x 12.80 mm x 4.25 mm (PG-TO220-3 package)
RoHS compliant, Halogen-Free
Buy the Buy Infineon StrongIRFET 2 Power-Transistor Part Number IPP024N08NF2S Online
Enhance your power circuits with the Infineon StrongIRFET 2 Power-Transistor. Designed for demanding applications, it offers high current capacity, low Rds(on), and robust avalanche performance. RoHS compliant and halogen-free, this device ensures reliability and safety in industrial, automotive, and power management systems. The compact PG-TO220-3 package provides easy integration. Whether replacing existing components or designing new systems, purchase this high-performance MOSFET online for quick delivery and proven quality, ensuring optimal efficiency and durability in your projects.
Get Infineon StrongIRFET 2 Power-Transistor today—built for high-current switching and long-lasting durability in power management applications.
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