The Cinfineon BAR64 series consists of silicon PIN diodes optimized for RF attenuation and switching applications, operating above 1 MHz up to 6 GHz. Featuring very low capacitance at zero volt reverse bias (typ. 0.17 pF at frequencies above 1 GHz), low forward resistance (typ. 2.1 Ω @ 10 mA), and high voltage reverse capabilities (up to 150 V), these RoHS-compliant, Pb-free diodes ensure minimal signal distortion and reliable performance in RF systems. They are qualified under AEC Q101 for automotive applications and are available in various packages like SOT23, SOT323, and TSLP-2-19, with ratings up to 250 mW dissipation and junction temperatures of 150°C.
Capacitance: typ. 0.17 pF at f > 1 GHz, 0 V reverse bias
Maximum Power Dissipation: 250 mW
Junction Temperature: 150°C
Operating Temperature Range: -55°C to 125°C
Storage Temperature Range: -55°C to 150°C
Thermal Resistance: <60 K/W for BAR64-02EL, <140 K/W for others
Package Types: SOT23, SOT323, TSLP-2-19, SC79
Reverse Parallel Resistance: 3-10 kΩ depending on frequency
Charge Carrier Lifetime: approx. 1550 ns
RF Frequency Range: Above 1 MHz up to 6 GHz
RoHS and AEC Q101 qualified, Pb-free, low distortion
Buy the Cinfineon Series RF Diodes: BAR64-04
Purchase the Cinfineon BAR64-04 RF diode online today and enjoy high-quality RF attenuation and switching performance up to 6 GHz. With low capacitance, high voltage handling, and low distortion, this diode is ideal for advanced RF systems requiring reliable, efficient performance. Available in various packages like SOT23 and SC79, the BAR64-04 ensures seamless integration into your design. Order now and benefit from fast delivery, authentic quality, and expert support to meet your RF engineering needs.
Buy Cinfineon BAR64-04 RF Diode now and experience unmatched reliability and high-frequency performance in RF attenuation and switching applications.
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