The 600V CoolMOS™ E6 Power Transistor is a high-efficiency, fast-switching superjunction MOSFET designed for various power management applications. It features extremely low conduction and switching losses, high ruggedness, and ease of drive. Suitable for PFC stages, PWM switching, and resonant applications in servers, lighting, and consumer electronics, this device offers a low RDS(on), low gate charge, and excellent avalanche energy capabilities. Its robust design ensures reliable performance across a wide temperature range, making it ideal for industrial and telecom applications.
INFINEON IPP60R380E6XKSA1 Power Transistor Specifications:
Drain-source breakdown voltage: 600 V
RDS(on), max: 0.38 Ω
Gate threshold voltage: 2.5 V to 3.5 V
Gate charge: 32 nc
Drain pulse current: 30 A
Avalanche energy (single pulse): 210 mJ
Continuous drain current: 10.6 A at 25°C
Package: PG-TO 220
Thermal resistance, junction-case: 1.5 °C/W
Thermal resistance, junction-ambient: 62 °C/W
Maximum operating temperature: -55°C to 150°C
Gate-source voltage: ±20 V
Diode forward voltage: 0.9 V
Reverse recovery charge: 3.3 μC
Power dissipation (non FullPAK): 83 W at 25°C
Soldering temperature (wave reflow): 260°C
Mounting torque: 60 N·cm (non FullPAK)
Device on PCB: 40mm x 40mm x 1.5mm, 6cm² copper area
Buy the Buy Infineon CoolMOS Power Transistor Part Number IPP60R380E6 Online
Purchase the Infineon CoolMOS Power Transistor IPP60R380E6 online today. Designed for optimal efficiency in high-voltage switching applications, it features ultra-low conduction and switching losses, high ruggedness, and a compact form factor. Ideal for PFC, PWM stages, and resonant circuits across industrial, lighting, and telecom systems, this device ensures reliable operation. With extensive technical parameters including a 600V breakdown voltage, low RDS(on), and excellent avalanche energy, it guarantees durability and high performance in demanding environments. Buy now for superior power management solutions.
Get Infineon CoolMOS IPP60R380E6 today—built for high efficiency, fast switching, and reliable power management.
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