INFINEON IPS70R600P7SAKMA1 Superjunction Power Transistor
The 700V CoolMOS™ P7 Power Transistor is a high-performance, superjunction MOSFET designed for high-voltage switching applications such as chargers, adapters, lighting, and power supplies. It features extremely low switching losses, excellent thermal behavior, integrated ESD protection, and high efficiency at elevated switching frequencies. Its optimized platform delivers high power density and enables slim design solutions, making it suitable for cost-sensitive and space-constrained environments in consumer electronics and industrial automation.
INFINEON IPS70R600P7SAKMA1 Superjunction Power Transistor Specifications:
Drain-source breakdown voltage: 700 V
Maximum continuous drain current: 5.0 A at 100°C
Pulsed drain current: 20.5 A at 25°C
Gate threshold voltage: 3.5 V (typical)
Gate-source voltage: ±30 V
Power dissipation: 43.1 W at 25°C
Drain-source on-state resistance: 1.03 Ω (Typ.) at 10 V and 150°C
Input capacitance: 364 pF
Output capacitance: 7 pF
Reverse recovery time: 190 ns
Diode forward voltage: 0.9 V at 2.5 A
Operating temperature range: -40°C to +150°C
Package: PG-TO 251-3 (70S600P7)
Buy the Infineon Series CoolMOS P7 700V Power Transistor: IPS70R600P7S
Enhance your power management system with the Infineon 700V CoolMOS P7 Power Transistor. This high-voltage superjunction MOSFET offers extremely low losses, high efficiency, and integrated ESD protection, making it ideal for chargers, adapters, lighting, and similar applications. Its optimized platform supports high power density and enables slim, cost-effective designs. With excellent thermal performance and proven reliability, this transistor is perfect for demanding consumer and industrial electronics projects aiming for superior switching performance and energy savings.
Buy Infineon CoolMOS P7 700V Power Transistor now and experience unmatched reliability and performance in high-voltage switching applications.
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