INFINEON IPS70R900P7SAKMA1 High-Voltage Power Transistor
The 700V CoolMOS P7 Power Transistor by Infineon is a high-voltage MOSFET featuring low conduction and switching losses, excellent thermal behavior, and integrated ESD protection. Designed for high efficiency in applications like chargers, adapters, and lighting, this superjunction technology enhances power density and enables slim, compact designs. Suitable for flyback topologies, it operates with a drain-source breakdown voltage of 700V, low Rds(on), and ultrafast switching capabilities, making it ideal for cost-sensitive switch-mode power supplies in consumer electronics and industrial applications.
INFINEON IPS70R900P7SAKMA1 High-Voltage Power Transistor Specifications:
Drain-source breakdown voltage: 700V
Rds(on): 153 mΩ at 10V gate voltage
Gate threshold voltage: 3 - 3.5V
Maximum continuous drain current: 3.5A at 100°C
Pulsed drain current: 12.8A
Power dissipation: 30.5W at 25°C
Thermal resistance junction-ambient: 62°C/W
Operating temperature range: -40°C to 150°C
Gate charge: 6.8nC total, 0.9nC Qgs, 2.6nC Qua
Reverse diode forward voltage: 0.9V at 1.4A
Reverse recovery time: 160ns
Maximum dv/dt: 100V/ns
ESD immunity: Class 1C (2kV HBM)
Buy the Infineon IPS70R900P7S – Reliable High-Voltage Power Transistor for Industrial Applications
Purchase the Infineon IPS70R900P7S Power Transistor online now to benefit from its high 700V breakdown voltage, low Rds(on), fast switching, and excellent thermal stability. Ideal for designing efficient, high-density power supplies, LED lighting, and industrial automation systems. This reliable MOSFET ensures enhanced energy efficiency and reduced losses, making it perfect for cost-sensitive consumer and industrial applications. Secure your stock today and improve your project performance with proven quality in every component.
Order your Infineon IPS70R900P7S high-voltage power MOSFET today and ensure robust performance for switch-mode power supplies and industrial systems.
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