The IRFH4210DPbF is a HEXFET Power MOSFET designed for high efficiency switching applications, including synchronous rectifiers and buck converters. It features a low on-resistance of 1.10 mΩ at Ves = 10V, a low profile less than 0.9 mm, and industry-standard pinouts for easy integration. With a drain-to-source voltage of 25 V, it provides excellent thermal performance with low thermal resistance to PCB. Suitable for industrial and high-power electronics, it ensures reliable operation under demanding conditions, making it ideal for power management systems.
INFINEON IRFH4210DTRPBF Power MOSFET Specifications:
Drain-to-Source Voltage: 25 V
Continuous Drain Current: 44 A at Ves = 10V, 168 A at 100°C
Rds(on): 1.10 mΩ at Ves = 10V, 1.35 mΩ at Ves = 4.5V
Gate Threshold Voltage: 1.1 to 2.1 V
Gate Charge: 37.0 nC typical
Pulsed Drain Current: 400 A
Power Dissipation: 3.5 W (at Ta = 25°C)
Thermal Resistance (Junction-to-Case): 1.0°C/W
Operating Junction Temperature Range: -55°C to +150°C
Package Type: PQFN 5x6 mm
RoHS Compliant, Halogen-Free
Repetitive avalanche energy: 247 mJ
Maximum Drain-to-Source Breakdown Voltage: 25 V
Buy the International IRFH4210DTRPBF – Reliable Power MOSFET for Industrial Applications
Purchase the IRFH4210DTRPBF online now to ensure your projects benefit from high efficiency, low conduction losses, and reliable power switching. This industry-standard PQFN package offers excellent thermal performance and compatibility with surface-mount techniques, suitable for industrial, high-power, and electronic applications. Order today and experience dependable operation, improved power density, and features like low on-resistance and low thermal resistance. Get your high-quality power MOSFET now for seamless integration into your electronic systems and power supplies.
Order your International IRFH4210DTRPBF today and enhance your power management systems with this high-performance, low Rds(on) MOSFET designed for demanding industrial projects.
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