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INFINEON IDWD10G120C5XKSA1 Silicon Carbide Diode

The 5th Generation CoolSiC™ 1200V Schottky Diode enhances system efficiency with no reverse recovery current, high surge capacity, temperature-independent switching, and low forward voltage at high temperatures. Its rugged design, specified dv/dt robustness, and RoHS compliance make it suitable for industrial power supplies, solar inverters, charger infrastructure, and welding applications. Qualified according to JEDEC standards, this diode offers high reliability, power density, and EMI reduction, enabling smaller, more efficient, and cost-effective power systems across various industrial and renewable energy sectors.

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Source:Newark
Part No:IDWD10G120C5XKSA1
Stock:298
Inv Date:05-29-2026
Price: Unit price: $5.37
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Part No:IDWD10G120C5XKSA1
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Inv Date:05-29-2026
Price: Unit price: $6.69
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Part No:IDWD10G120C5XKSA1
Stock:3113
Inv Date:05-30-2026
Price: Unit price: $5.34
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Part No:IDWD10G120C5XKSA1
Stock:47
Inv Date:05-30-2026
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INFINEON IDWD10G120C5XKSA1 Silicon Carbide Diode Specifications:

  • Maximum Repetitive Peak Reverse Voltage: 1200 V
  • Continuous Forward Current: 10 A at 25°C, 16 A at 135°C, 34 A at 25°C with specific conditions
  • Surge Repetitive Forward Current: 40 A at Tc=25°C, 30 A at Tc=100°C
  • Surge Non-repetitive Forward Current: 140 A at Tc=25°C, 130 A at Tc=150°C
  • Peak Forward Current: 1070 A
  • Diode dv/dt Ruggedness: 80 V/ns
  • Power Dissipation: 148 W at Tc=25°C
  • Operating Temperature Range: -55°C to +175°C
  • Storage Temperature Range: -55°C to +150°C
  • Soldering Temperature (Wave): 260°C for 10 seconds
  • Thermal Resistance (Junction to case): 0.8 K/W
  • Junction to ambient: max 62 K/W
  • Diode Forward Voltage: 1.4-1.65 V at 10 A, 150°C
  • Total Capacitance: 51 pF, dynamic charge: 57 nC at 800 V
  • Max Reverse Voltage: 1200 V
  • Marking: D1012C5
  • Package: PG-TO247-2
  • Mounting Torque: 0.6 Nm (max 3 mounting processes)

Buy the Infineon IDWD10G120C5 – Reliable SiC Diode for Industrial Applications

Purchase the high-performance Infineon IDWD10G120C5 Silicon Carbide Diode online now. This 1200V, 10A diode delivers excellent efficiency, surge resilience, and thermal stability, making it ideal for industrial power supplies, solar inverters, chargers, and welding systems. Its Rugged dv/dt specifications, low forward voltage, and RoHS compliance ensure dependable operation across harsh environments. Enjoy quick delivery, competitive pricing, and trusted quality to maximize your project's reliability and energy savings. Order today and power your solutions with confidence.

Order your Infineon IDWD10G120C5 1200V Schottky Diode today and enhance your power systems with high efficiency, surge capacity, and robust reliability.

Frequently Asked Questions

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How do I troubleshoot issues or seek technical support for part IDWD10G120C5XKSA1?

You can download the IDWD10G120C5XKSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IDWD10G120C5XKSA1?

INFINEON

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