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INFINEON IRFR5505TRPBF P-Channel Power MOSFET

The IRFR5505TRPBF is a fifth-generation HEXFET® single P-channel Power MOSFET that features advanced processing technology to achieve very low ON-resistance per silicon area. It offers fast switching speeds and a ruggedized design, making it highly efficient and reliable for various applications. The device is suitable for surface-mounting using vapor phase, infrared, or wave soldering techniques and can dissipate up to 1.5W in typical surface-mount configurations. Key features include advanced process technology, fast switching, fully avalanche-rated capability, low static drain-to-source ON-resistance, dynamic dV/dt rating, and halogen-free construction. Common applications include automotive and power management systems. Note: Due to high market demand, lead times may be extended, and delivery dates can fluctuate.

Authorized Distributors
Source:Newark
Part No:IRFR5505TRPBF
Stock:64000
Inv Date:05-29-2026
Price: Unit price: $0.51
Buy/RFQ:
Source:DigiKey
Part No:IRFR5505TRPBF
Stock:62678
Inv Date:05-29-2026
Price: Unit price: $1.86
Buy/RFQ:
Part No:IRFR5505TRPBF
Stock:16505
Inv Date:05-30-2026
Price: Unit price: $1.6
Buy/RFQ:
Part No:IRFR5505TRPBF
Stock:20
Inv Date:05-29-2026
Price: Unit price: $0.11
Buy/RFQ:
Part No:IRFR5505TRPBF
Stock:80000
Inv Date:05-29-2026
Price: Unit price: $0.375
Buy/RFQ:
Source:Arrow EU
Part No:IRFR5505TRPBF
Stock:106000
Inv Date:05-30-2026
Price: N/A
Buy/RFQ:
Part No:IRFR5505TRPBF
Stock:156
Inv Date:05-30-2026
Price: N/A
Buy/RFQ:

INFINEON IRFR5505TRPBF P-Channel Power MOSFET Specifications:

  • Package Type: D-Pak (TO-252AA)
  • Drain-to-Source Breakdown Voltage: -55V
  • Continuous Drain Current: -18A at 25°C
  • Pulsed Drain Current: -64A
  • Power Dissipation: 1.5W typical
  • Operating Junction Temperature Range: -55°C to +150°C
  • Gate-to-Source Voltage: ±20V
  • Static Drain-to-Source On-Resistance: 0.112Ω
  • Fall Time: 8 ns
  • Rise Time: 9.64 ns
  • Thermal Resistance Junction-to-Case: 22°C/W
  • Thermal Resistance Junction-to-Ambient: 50°C/W
  • Avalanche Energy: 150 mJ
  • Fully Avalanche Rated
  • Halogen-Free and Lead-Free
  • Surface Mount Compatible with vapor phase, infrared, or wave soldering
  • Maximum Power Dissipation: 1.5W
  • Dynamic dV/dt Resistance: 6.0 V/ns
  • Gate Threshold Voltage: Max. 2.0V
  • Body Diode Recovery dv/dt: -6.0 V/ns

Buy the Buy International HEXFET P-Channel Part Number IRFR5505TRPBF Online

Order the International HEXFET P-channel Power MOSFET IRFR5505TRPBF online today to ensure your projects benefit from superior low ON-resistance, fast switching, and robust design. Perfect for automotive, power management, and high-efficiency applications, this device offers advanced processing technology, avalanche-rated capability, halogen-free construction, and excellent thermal performance. Easy to mount with surface mount techniques, it guarantees reliable operation in demanding environments. Secure your supply now and enhance your electronics with this high-quality, efficient power switching component.

Buy International HEXFET IRFR5505TRPBF now and experience unmatched low ON-resistance, fast switching speeds, and reliable power performance.

Frequently Asked Questions

Where can I buy INFINEON IRFR5505TRPBF?

You can click on the BUY or RFQ button to purchase IRFR5505TRPBF from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IRFR5505TRPBF?

You can download the IRFR5505TRPBF datasheet or visit the INFINEON website for support.

Who is the manufacturer of IRFR5505TRPBF?

INFINEON

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