This high-performance single N-channel power MOSFET features advanced process technology, ultra-low on-resistance, and fast switching speeds. Designed for efficient power switching, it offers a wide operating temperature up to 175°C, full avalanche rated capability, and high-current handling. Packaged in a TO-220 form factor, it ensures reliable thermal management and rugged operation in demanding power management applications. Suitable for industrial, automotive, and consumer electronics, this device provides excellent efficiency and durability, meeting industry standards for high-current switching and robust design.
Rds(on): 0.006 Ω at Ves = 10V, 0.009 Ω at Ves = 4.5V
Gate Threshold Voltage: 1.0 V
Gate Charge: 140 nC
Reverse Recovery Time: 120 ns
Avalanche Energy: 610 mJ
Operating Junction Temperature Range: -55°C to +175°C
Thermal Resistance Junction-to-Case: 0.75 °C/W
Thermal Resistance Case-to-Sink: 0.50 °C/W
Junction-to-Ambient: 62 °C/W
Gate-to-Source Voltage: +16 V
Soldering Temperature (10s): 300 °C
Mounting torque: 10 lbfin (1.1 Nm)
Reverse Diode Forward Voltage: 1.3 V at 71 A
Body Diode Reverse Recovery Charge: 450-680 nC
Operating Temperature: -55°C to +175°C
Lead-Free and RoHS Compliant
Buy the Infineon IRL3803PbF – Reliable HEXFET Power MOSFET for Industrial Applications
Purchase the Infineon IRL3803PbF power MOSFET online now to benefit from its high-current handling, ultra-low Rds(on), and robust design suited for industrial and power conversion applications. This N-channel HEXFET device in a TO-220 package offers fast switching speeds, full avalanche rated capability, and operates efficiently at temperatures up to 175°C. Perfect for demanding power supply circuits, motor control, and other high-power projects, it guarantees durability, reliability, and industry-standard performance for your critical applications.
Order your Infineon IRL3803PbF power MOSFET today and enhance your power management systems with reliable, fast-switching performance.
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