The BFR340F is a low noise silicon bipolar RF transistor designed for general-purpose low noise amplifiers. It features a high breakdown voltage suitable for automotive applications and offers a minimum noise figure of 1.0 dB at 1mA, 1.5 V, and 1.9 GHz. The device is lead-free, halogen-free, and housed in a compact TSFP-3 package measuring 1.2 x 1.2 mm, with visible leads. Its robust electrical characteristics and qualification for AEC-Q101 make it ideal for demanding RF circuit designs requiring high reliability.
Voltage ratings: 6 V (V_CEo), 15 V (V_CEs), 15 V (V_oB), 2 V (V_eB)
Maximum collector-emitter voltage: 15 V
Collector power dissipation: 75 mW
Storage temperature: -55°C to 150°C
ESD sensitive device, handle with precautions
Buy the Infineon Series RF Transistor: BFR340F Low Noise Silicon Bipolar RF Transistor
Order the Infineon BFR340F RF transistor online today and enjoy superior low noise performance of 1.0 dB at 1.9 GHz, high breakdown voltage, and compact, lead-free packaging. Ideal for automotive RF applications, this transistor guarantees reliable operation with robust voltage ratings and excellent thermal management. Its small footprint and AEC-Q101 qualification make it perfect for high-demand environments requiring precise RF amplification. Secure your inventory now and enhance your RF circuit designs with this high-quality, low noise semiconductor device.
Buy Infineon BFR340F now and experience unmatched reliability and high-performance RF amplification in automotive and consumer electronics.
Frequently Asked Questions
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