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INFINEON IRLR3410TRLPBF Logic Level Gate Drive MOSFET

The Infineon IRLR3410TRLPBF is a fifth-generation HEXFET Power MOSFET designed for efficient power management. Utilizing advanced processing techniques, it achieves exceptionally low on-resistance per silicon area, combined with fast switching speed and a ruggedized design. This MOSFET is ideal for a wide range of applications requiring high efficiency and reliable performance, including power supplies, motor drives, and lighting systems. Its D-PAK package is suitable for surface mounting, while the straight lead version caters to through-hole mounting needs. With its avalanche rating and robust thermal characteristics, the IRLR3410TRLPBF provides a dependable solution for demanding power applications.

Authorized Distributors
Source:Newark
Part No:IRLR3410TRLPBF
Stock:1424
Inv Date:05-29-2026
Price: Unit price: $1.55
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Source:DigiKey
Part No:IRLR3410TRLPBF
Stock:5111
Inv Date:05-29-2026
Price: Unit price: $0.45858
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Part No:IRLR3410TRLPBF
Stock:0
Inv Date:05-30-2026
Price: Unit price: $1.49
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Part No:IRLR3410TRLPBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $1.41
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Part No:IRLR3410TRLPBF
Stock:18000
Inv Date:05-29-2026
Price: Unit price: $0.345
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Source:Arrow EU
Part No:IRLR3410TRLPBF
Stock:45000
Inv Date:05-30-2026
Price: N/A
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Part No:IRLR3410TRLPBF
Stock:578
Inv Date:05-30-2026
Price: N/A
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INFINEON IRLR3410TRLPBF Logic Level Gate Drive MOSFET Specifications:

  • Continuous Drain Current @ 25°C: 17A
  • Continuous Drain Current @ 100°C: 12A
  • Pulsed Drain Current: 60A
  • Power Dissipation @ 25°C: 79W
  • Linear Derating Factor: 0.53 W/°C
  • Gate-to-Source Voltage: +/-16V
  • Single Pulse Avalanche Energy: 150mJ
  • Avalanche Current: 9.0A
  • Repetitive Avalanche Energy: 7.9mJ
  • Peak Diode Recovery dv/dt: 5.0V/ns
  • Operating Junction and Storage Temperature Range: -55 to +175°C
  • Soldering Temperature: 300°C (1.6mm from case)
  • Junction-to-Case Resistance: 1.9°C/W
  • Junction-to-Ambient Resistance (PCB mount): 50°C/W
  • Junction-to-Ambient Resistance: 110°C/W
  • Drain-to-Source Breakdown Voltage: 100V
  • Static Drain-to-Source On-Resistance: 0.105W @ VGS=10V, ID=10A
  • Gate Threshold Voltage: 1.0 to 2.0V
  • Forward Transconductance: 7.7S
  • Drain-to-Source Leakage Current: ≤25µA @ VDS=100V, VGS=0V
  • Gate-to-Source Forward Leakage: ≤100nA
  • Gate-to-Source Reverse Leakage: ≤-100nA
  • Total Gate Charge: 34nC
  • Turn-On Delay Time: 7.2ns
  • Rise Time: 53ns
  • Turn-Off Delay Time: 30ns
  • Fall Time: 26ns
  • Internal Drain Inductance: 4.5nH
  • Internal Source Inductance: 7.5nH
  • Input Capacitance: 800pF
  • Output Capacitance: 160pF
  • Reverse Transfer Capacitance: 90pF

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You can download the IRLR3410TRLPBF datasheet or visit the INFINEON website for support.

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INFINEON

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