INFINEON 1EDI20N12AFXUMA1 High Voltage Gate Driver
The 1EDI20N12AF is a galvanically isolated single channel gate driver designed for high voltage power FETs and GaN HEMTs. It features output currents of at least 2 A with separated source and sink outputs in a compact PG-DSO-8-51 package. The driver operates over a wide input voltage range from 3 V to 15 V, supporting various microcontrollers. It utilizes Coreless Transformer Technology for bidirectional data transfer, with integrated undervoltage lockout (UVLO) and active shutdown for safe operation in high-power applications such as motor drives, PFC, DC-DC converters, and inverters.
INFINEON 1EDI20N12AFXUMA1 High Voltage Gate Driver Specifications:
Output Current: at least 2 A
Input Voltage Range: 3 V to 15 V
Isolation Voltage: up to 1200 V
Package: PG-DSO-8-51
Peak Current: 4 A
Operating Temperature: -40°C to +125°C
UVLO Threshold: 2.85 V to 3.1 V (input), 8.0 V to 8.5 V (output)
Input Pin Voltage: -0.3 V to 18 V
Output Voltage: VCC2 positive supply typically 12 V, GND2 negative side -8 V for bipolar supply
Data transfer via Coreless Transformer Technology
Protection features: UVLO, Active Shut-Down, Short Circuit Clamping
Switching Frequency: up to 4 MHz
Buy the Buy Infineon 1EDI20N12AF Part Number 1EDI20N12AF Online
Order the Infineon 1EDI20N12AF online today and enhance your power electronics designs with a compact, galvanically isolated gate driver supporting up to 2 A output current. Ideal for high voltage FET and GaN HEMT applications, it offers wide operating voltage range from 3 V to 15 V, integrated UVLO, active shutdown, and short circuit protection. Its Coreless Transformer Technology ensures robust data transfer across isolation barriers, perfect for motor drives, inverters, PFC circuits, and more, ensuring safe and efficient operation.
Buy Infineon 1EDI20N12AF now and experience unmatched reliability and high-voltage switching performance with galvanic isolation and fast response times.
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