High-voltage, three-phase gate driver IC designed for driving up to six IGBT or MOSFET devices in inverter and motor drive applications. Features integrated bootstrap circuitry, over-current and over-temperature protections, and separate logic and power grounds. Supports operation from 10 V to 20 V supply voltages, with matching propagation delays, deadtime protection, and fast switching times for high efficiency and reliability in industrial and automation systems.
Input Logic: HIN/N, LIN/N (IRS2336(D)); HIN, LIN (IRS23364D)
Undervoltage Lockout: Yes
Propagation Delay: 530 ns typical (ton, torr)
Deadtime: 275 ns
Supply Voltage Range: 10 V to 20 V
Operating Temperature Range: -40°C to 125°C
Package Options: PDIP28, SOIC28W, PLCC44
ESD Rating: Class 1C (JEDEC JESD22-A114)
RoHS Compliant: Yes
Designed for high-speed switching in inverter and motor drive systems
Integrated bootstrap FET with internal diode (limitations apply)
Supports negative transient voltage tolerance up to -50 V for short durations
Separate logic (Vss) and power (COM) grounds for noise reduction
Matching propagation delays for all channels for synchronized switching
Buy the International Series IRS23364D High Voltage Gate Driver IC: IRS23364DJPBF
Purchase the International IRS23364DJPBF online today to ensure your inverter and motor drive projects benefit from reliable protection features, integrated bootstrap circuitry, and fast switching times. Designed for industrial applications, this high-voltage IC supports up to six power devices with precise timing and robust protection. Easy to integrate with support for standard CMOS logic signals, it enhances system efficiency and safety. Order now for prompt delivery and keep your automation systems operating smoothly.
Get International IRS23364DJPBF today—built for precision, high-speed switching, and long-lasting durability in industrial inverter systems.
Frequently Asked Questions
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