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INFINEON IRFP4229PBF Power MOSFET

The IRFP4229PBF is a HEXFET® single N-channel Power MOSFET designed for various applications including power management, plasma display panels, and consumer electronics. It features advanced process technology that ensures low ON-resistance, low EPULSE ratings for reduced power dissipation, and quick response due to low gate charge (Qg). The device offers a high repetitive peak current capability, short rise and fall times for fast switching, and robust performance with repetitive avalanche capability. It is suitable for sustain, energy recovery, and pass switch applications, operating reliably at junction temperatures up to 175°C and providing a highly efficient and durable solution for demanding electronic systems.

Authorized Distributors
Source:DigiKey
Part No:IRFP4229PBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $2.01438
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Part No:IRFP4229PBF
Stock:0
Inv Date:05-30-2026
Price: N/A
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Part No:IRFP4229PBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $2.22
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Part No:IRFP4229PBF
Stock:0
Inv Date:05-29-2026
Price: Unit price: $3.06
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Source:Arrow EU
Part No:IRFP4229PBF
Stock:3922
Inv Date:05-30-2026
Price: N/A
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INFINEON IRFP4229PBF Power MOSFET Specifications:

  • Ves Gate-to-Source Voltage +30 V
  • Continuous Drain Current @ 25°C 44 A
  • Continuous Drain Current @ 100°C 31 A
  • Pulsed Drain Current 180 A
  • Repetitive Peak Current 87 A
  • Power Dissipation @ 25°C 310 W
  • Power Dissipation @ 100°C 150 W
  • Operating Junction Temperature -40°C to +175°C
  • Storage Temperature Range -55°C to +175°C
  • Thermal Resistance Junction-to-Case 0.49°C/W
  • Thermal Resistance Case-to-Sink 0.24°C/W
  • Gate Threshold Voltage 3.0V to 5.0V
  • Maximum Breakdown Voltage 250V
  • On-Resistance @ 10V 38 mΩ
  • Gate Charge 72-110 nC
  • Switching Times Rise 27 ns, Fall 19 ns
  • Avalanche Energy 300 mJ
  • Body Diode Forward Voltage ~1.3V
  • Operating at 175°C junction temperature
  • Repetitive Avalanche Voltage 300V
  • Body Diode Reverse Recovery Time 190-290 ns

Buy the Buy International IRFP4229PBF Power MOSFET Part Number IRFP4229PBF Online

Purchase the IRFP4229PBF Power MOSFET online today for superior power management and switching efficiency. Designed for plasma display panels, power supplies, and consumer electronics, this single N-channel HEXFET® device offers low ON-resistance, fast switching times, and excellent thermal performance up to 175°C. Its high repetitive peak current capability ensures robust operation under demanding conditions, making it ideal for energy recovery, sustain, and pass switch applications. With quick response and reliable avalanche features, it provides a durable solution for modern electronic systems. Buy now for optimal system performance.

Buy International IRFP4229PBF now and experience unmatched reliability and performance for high-efficiency switching in demanding electronic systems.

Frequently Asked Questions

Where can I buy INFINEON IRFP4229PBF?

You can click on the BUY or RFQ button to purchase IRFP4229PBF from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IRFP4229PBF?

You can download the IRFP4229PBF datasheet or visit the INFINEON website for support.

Who is the manufacturer of IRFP4229PBF?

INFINEON

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