The OptiMOS™ Power-MOSFET 30 V is an N-channel device optimized for high-performance buck converters, featuring an integrated monolithic Schottky-like diode, very low on-resistance, and superior thermal resistance. It is qualified according to JEDEC standards, with a drain-source breakdown voltage of 30 V and continuous drain current of 40 A at 25°C. Its thermal characteristics include a junction-to-case resistance of 3.4 KW and junction-to-ambient resistance of 60 KW on a 6 cm2 PCB. Ideal for power switching applications requiring high efficiency and robust thermal management.
Thermal resistance junction-to-ambient Rth(ja): 60 KW on PCB
Operating temperature range: -55°C to +150°C
Diode forward voltage Vsd: 0.56 V at 3 A
Diode pulse current Is,pulse: 160 A
Avalanche current Ins: 20 A
Avalanche energy Ens: 20 mJ
Package type: PG-TSDSON-8 FL
Buy the Buy Infineon OptiMOS Power-MOSFET Part Number ISZ040N03L5IS Online
Purchase the Infineon Power MOSFET with part number ISZ040N03L5IS online today to ensure high performance and low heat dissipation in your power switching applications. This N-channel device features a 30 V drain-source voltage, 40 A continuous drain current, very low on-resistance of 3.3 mΩ, and integrated Schottky-like diode for efficient power conversion. Its robust thermal characteristics include a junction-to-case resistance of 3.4 KW and excellent operation up to 150°C. Perfect for power supplies, industrial drives, and high-efficiency buck converters, ensuring reliability and optimal thermal management.
Order your Infineon Series ISZ040N03L5IS high-efficiency Power-MOSFET today and enhance your power management with reliable, low on-resistance transistors.
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