The IRF7606PbF is a fifth-generation HEXFET P-channel power MOSFET with ultra-low on-resistance and fast switching capabilities. Designed in a compact Micro8 SOIC package, it features a low profile less than 1.1mm, ideal for space-constrained applications such as portable electronics and thin devices. Its high-efficiency performance makes it suitable for various switching power supply and load management applications, providing reliable operation with a drain-source voltage of -30V, continuous current of 3.6A, and power dissipation up to 1.8W. It’s lead-free and optimized for modern electronic designs.
INFINEON IRF7606TRPBF Power MOSFET Specifications:
Drain-Source Voltage: -30 V
Continuous Drain Current: 3.6 A @ Ta=25°C
Power Dissipation: 1.8 W @ Ta=25°C
Gate-to-Source Voltage: ±20 V
Maximum Junction Temperature: +150°C
Low Profile Micro8 SOIC Package, <1.1mm height
Thermal Resistance: Junction-to-Ambient 70°C/W
Gate Threshold Voltage: Vgs = -2.0 V to -4.5 V
On-Resistance: 0.09 Ω at Vgs = -10 V
Maximum Drain Current Pulsed: -29 A
Repetitive rating pulse width limited by maximum junction temperature
Lead-Free and RoHS Compliant
Buy the Buy International HEXFET P-Channel Power MOSFET Part Number IRF7606TRPBF Online
Purchase the IRF7606PbF today for your electronic projects. With its ultra-low on-resistance, fast switching speed and small Micro8 package, it’s perfect for portable and space-efficient designs. Ideal for switching power supplies, load management, and high-current applications, this lead-free device offers reliable operation at high temperatures with a maximum voltage of -30V and continuous current of 3.6A. Ensure your circuit’s efficiency and durability with this high-performance MOSFET, available for quick online ordering.
Get International HEXFET IRF7606PbF today—designed for ultra-low on-resistance, rapid switching, and reliable high-current performance in compact spaces.
Frequently Asked Questions
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