INFINEON IPA50R950CEXKSA2 High-Voltage Power Transistor
The IPA50R950CE is a 500V CoolMOS™ power transistor utilizing superjunction technology for high efficiency and low losses. Designed for switching applications such as PFC, PWM, and resonant stages, it offers very low Rds(on)*Qg and Eoss for cost-effective, reliable performance in consumer lighting, adapters, and display power supplies. With high ruggedness and ease of drive, this MOSFET is suitable for demanding high-voltage switching environments, enabling improved energy efficiency and thermal management in modern electronic systems.
INFINEON IPA50R950CEXKSA2 High-Voltage Power Transistor Specifications:
Drain-source breakdown voltage: 500V
Gate threshold voltage: 3V to 3.5V
Drain-source on-state resistance: typically 2.20Ω at Tj=150°C
continuous drain current: up to 6.6A
Pulsed drain current: 12.8A
Avalanche energy, single pulse: 68mJ
Power dissipation: 25.7W at 25°C
Maximum operating and storage temperature: -40°C to 150°C
Thermal resistance, junction to case: 4.86°C/W
Gate charge (total): 10.5nC
Reverse diode forward voltage: 0.83V at 1.6A
Diode reverse recovery time: 140ns
Max switching speed: dv/dt up to 50V/ns
Package: PG-TO 220 FullPAK
Isolation withstand voltage: 2500V
Mounting torque: 50 N·cm
Buy the Infineon IPA50R950CE U+2013 Reliable Power Transistor for Industrial Applications
Purchase the Infineon IPA50R950CE power transistor online today to ensure your switching applications benefit from high efficiency, low losses, and robust high-voltage performance. Designed for industrial and consumer electronics, this reliable device supports your PFC, PWM, and resonant switching stages with ease of use and excellent thermal characteristics. Secure your supply of this 500V CoolMOS™ transistor now and optimize your power conversion systems for maximum efficiency and durability in demanding environments.
Order your Infineon IPA50R950CE power transistor today and enhance your high-voltage switching projects with reliable efficiency and rugged performance.
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