The Infineon BFR193 is a low-noise silicon bipolar RF transistor designed for high-gain, linear broadband amplification up to 2 GHz. It features a RoHS-compliant, lead-free SOT23 package, making it suitable for RF and microwave applications requiring minimal noise figure and high linearity. The device offers a transition frequency of 6 GHz, a low noise figure at 900 MHz, and maximum collector-emitter voltage of 12 V, with a collector current of 80 mA. Its compact size and high-performance specifications make it ideal for RF communication systems and broadband amplifiers.
Buy the Infineon BFR193 – Reliable RF Transistor for Industrial Applications
Purchase the Infineon BFR193 RF transistor online now to ensure high-performance, low-noise amplification for your RF communication and broadband projects. Its compact SOT23 package and RF specifications deliver reliable operation up to 2 GHz, ideal for linear broadband amplifiers. The device features a transition frequency of 6 GHz, a noise figure of just 0.66 dB at 900 MHz, and a maximum collector-emitter voltage of 12 V. Designed with eco-friendly RoHS compliance, it offers engineers a durable and efficient component to support various high-frequency applications with ease and confidence.
Get Infineon BFR193 today—built for precision and long-lasting durability in RF and broadband amplification systems.
Frequently Asked Questions
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