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INFINEON IMW65R072M1HXKSA1 Silicon Carbide Power MOSFET

The 650 V CoolSiC™ MOSFET built on silicon carbide technology offers high system efficiency, reliability, and performance in harsh environments. Its optimized switching behavior, robust fast body diode, and high avalanche capability make it ideal for applications like solar inverters, uninterruptible power supplies, EV charging, and energy storage. Fully qualified for industrial use, it features low gate charge, low on-resistance, and excellent thermal management, enabling cost-effective and reliable power conversion in demanding conditions, with compatibility for standard drivers at 18V.

Authorized Distributors
Source:Newark
Part No:IMW65R072M1HXKSA1
Stock:126
Inv Date:05-29-2026
Price: Unit price: $9
Buy/RFQ:
Source:DigiKey
Part No:IMW65R072M1HXKSA1
Stock:210
Inv Date:05-29-2026
Price: Unit price: $9.61
Buy/RFQ:
Part No:IMW65R072M1HXKSA1
Stock:240
Inv Date:05-29-2026
Price: Unit price: $3.51
Buy/RFQ:

INFINEON IMW65R072M1HXKSA1 Silicon Carbide Power MOSFET Specifications:

  • Drain-source breakdown voltage: 650 V
  • Pulsed drain current: 69 A
  • Continuous drain current: Not specified; external data suggests high current capability
  • Avalanche energy, single pulse: 114 mJ
  • Avalanche energy, repetitive: 0.57 mJ
  • Gate threshold voltage: 3.5 V to 5.7 V
  • On-state resistance Rds(on): 0.094 Ω at 8 V
  • Gate charge: Qg ≈ 22 nC
  • Reverse recovery charge: Qr ≈ 90 nC
  • Maximum power dissipation: 96 W at Tj=25°C
  • Thermal resistance junction-case: 1.3 °C/W
  • Junction temperature range: -55°C to 150°C
  • Gate resistance: 9.0 Ω at 1 MHz
  • Storage temperature: -55°C to 150°C
  • Infineon package: PG-TO 247-3
  • Operating junction temperature: -55°C to 150°C
  • Ves (Gate-Source Voltage): -5 V to 23 V
  • Gate to source charge Qs: 6 N·C
  • Gate to drain charge Qd: 5 N·C
  • Output capacitance Coss: 86 to 112 pF
  • Input capacitance Ciss: 744 pF
  • Reverse capacitance Crss: 9 pF

Buy the Infineon Series CoolSiC Silicon Carbide MOSFET: IMW65R072M1H

Purchase the Infineon 650 V CoolSiC MOSFET IMW65R072M1H online today to benefit from high efficiency, superior thermal stability, and robust performance in demanding applications such as solar inverters, energy storage, and EV charging. This advanced power device offers low switching losses, high avalanche ruggedness, and easy integration with standard drivers at 18V, ensuring reliable operation and simplified system design for high-power industrial, automotive, and renewable energy applications. Elevate your power electronics with this industry-leading silicon carbide MOSFET now.

Buy Infineon IMW65R072M1H now and experience unmatched reliability and performance in harsh power conversion environments.

Frequently Asked Questions

Where can I buy INFINEON IMW65R072M1HXKSA1?

You can click on the BUY or RFQ button to purchase IMW65R072M1HXKSA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part IMW65R072M1HXKSA1?

You can download the IMW65R072M1HXKSA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of IMW65R072M1HXKSA1?

INFINEON

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