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INFINEON SPD04N60C3ATMA1 Power MOSFET

The SPD04N60C3 is a 650V CoolMOS™ N-channel Power MOSFET featuring ultra-low gate current. It incorporates revolutionary high-voltage technology, offers extreme dV/dt rating, and has high peak current capability. This device is qualified according to JEDEC standards for various applications, with improved transconductance and periodic avalanche rating. It exhibits low specific ON-state resistance and very low energy storage in output capacitance (Eoss) at 400V. Known for its field-proven CoolMOS™ quality, it ensures high efficiency and power density, making it suitable for industrial, telecommunications, networking, consumer electronics, and power management applications. The MOSFET delivers outstanding performance, high reliability, and ease of use. Due to high market demand, lead times may extend, and delivery dates can fluctuate. This product is exempt from discounts.

Authorized Distributors
Source:Newark
Part No:SPD04N60C3ATMA1
Stock:108
Inv Date:05-29-2026
Price: Unit price: $0.29
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Source:DigiKey
Part No:SPD04N60C3ATMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.81377
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Part No:SPD04N60C3ATMA1
Stock:2836
Inv Date:05-30-2026
Price: Unit price: $2.36
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Part No:SPD04N60C3ATMA1
Stock:0
Inv Date:05-29-2026
Price: Unit price: $0.415
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INFINEON SPD04N60C3ATMA1 Power MOSFET Specifications:

  • Voltage Rating: 650V
  • Maximum Drain Current: 45A at 25°C, 2.8A at 100°C
  • Pulsed Drain Current: 13.5A
  • Avalanche Energy: 130mJ (single pulse)
  • Avalanche Current: 45A
  • Gate-Source Voltage: +20V (static), +30V (AC)
  • Power Dissipation: 50W at 25°C
  • Operating Temperature Range: -55°C to +150°C
  • Device Package: PG-TO252
  • Gate Charge: Qg not specified, but low gate charge feature
  • Rds(on): Low ON-resistance (exact value specified in data sheets)
  • Thermal Resistance: Rth(junction-case): 2.5 K/W, Rth(junction-ambient): 75 K/W
  • Track record: Qualified per JEDEC standards, RoHS compliant, Pb-free lead plating
  • Switching Characteristics: t_on, t_off in the nanosecond range, dv/dt rated up to 50 V/ns
  • Reverse Recovery Time: 300-500 ns, Reverse recovery charge: 2.6 pC

Buy the Cinfineon Series CoolMOS N-channel Power MOSFET: SPD04N60C3

Experience high-performance power switching with the Cinfineon SPD04N60C3. This 650V N-channel MOSFET features ultra-low gate charge, high peak current capability, and exceptional dV/dt resistance. Engineered for reliability, it offers low Rds(on), efficient energy storage, and complies with JEDEC standards, making it ideal for power supply, industrial, and high-frequency applications. Whether used in telecommunications, consumer electronics, or power management systems, this device delivers outstanding efficiency, high power density, and ease of integration. Purchase online today for fast, reliable delivery and improved system performance.

Get Cinfineon SPD04N60C3 today—built for high efficiency, high peak current, and ultra-low gate charge in power management solutions.

Frequently Asked Questions

Where can I buy INFINEON SPD04N60C3ATMA1?

You can click on the BUY or RFQ button to purchase SPD04N60C3ATMA1 from an authorized INFINEON distributor.

How do I troubleshoot issues or seek technical support for part SPD04N60C3ATMA1?

You can download the SPD04N60C3ATMA1 datasheet or visit the INFINEON website for support.

Who is the manufacturer of SPD04N60C3ATMA1?

INFINEON

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