The BFP640F is a high-performance, low noise silicon germanium (SiGe) bipolar RF transistor designed for wideband applications. It features high linearity with a transition frequency of approximately 42 GHz, making it ideal for RF amplifiers in satellite, cellular, and wireless communication systems. The device supports voltages up to 4.1 V and currents up to 50 mA, facilitating energy-efficient, high-gain amplification at frequencies up to 8 GHz. Packaged in a small, RoHS-compliant TSFP-4-1 plastic case, it assures ease of integration in compact RF modules and handheld devices.
Power dissipation Ptotal = 200 mW at 92°C junction temperature
Transition frequency fT ≈ 42 GHz
Noise figure NF ≈ 0.75 dB at 3.5 GHz, 6 mA bias
Maximum power gain Gmax ≈ 16.5 dB at 3.5 GHz, 25 mA
S-parameters measured up to 24 GHz
Package: TSFP-4-1, RoHS compliant, halogen-free
Temperature range: -55°C to +150°C, soldering point Tz max 92°C
Collector-base capacitance Ccb ≈ 0.09 pF at Vcg=3 V
Collector-emitter breakdown voltage Vces ≥ 13 V
Buy the Infineon BFP640F – Reliable RF Transistor for Industrial Applications
Enhance your RF designs by purchasing the Infineon BFP640F online. This SiGe bipolar RF transistor offers high gain, low noise, and broad bandwidth suitable for satellite, cellular, and wireless systems. Its compact TSFP-4-1 package simplifies integration in space-constrained applications. With a transition frequency of approximately 42 GHz and low power consumption, it is perfect for low noise amplifier designs, MMIC modules, and high-frequency stage setup. Order now and ensure reliable performance in your next project.
Order your Infineon BFP640F RF transistor today and empower your wireless and satellite communication projects with high linearity and exceptional RF performance.
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