The MAX2601ESA+ is a high-performance RF power transistor designed for 900 MHz applications, featuring an 8-pin NSOIC package. It is optimized for portable cellular and wireless devices operating from three NiCd/NiMH cells or one Li-Ion cell. This silicon bipolar RF transistor delivers approximately 1W of RF power at 3.6V with an efficiency of 58% for constant envelope modulation such as FM or FSK. For NADC (IS-54) operation, it provides 29 dBm with -28 dBc ACPR from a 4.8V supply. The device’s silicon bipolar technology eliminates the need for bias inverters and sequencing circuitry required by GaAsFET amplifiers, and it does not require a drain switch, which enhances energy efficiency by allowing operation at lower battery voltages and reducing power waste. It is suitable for use in narrowband PCS, 915 MHz ISM transmitters, microcellular GSM (power class 5), two-way paging, and CDPD modems. It features a DC current gain of 100 at 250mA, operates from -40°C to 85°C, and can be used as a final stage in power amplifiers. The MAX2601ESA+ requires no negative bias or supply switching, with collector-emitter and collector-base breakdown voltages of 15V, and a collector cutoff current of 0.05µA at specified conditions. It offers a power gain of 11.6 dB at 30 dBm output and a noise figure of 3.3 dB at VBB = 0.9V.
Purchase the Maxim MAX2601ESA+ RF power transistor online today to enhance your cellular, wireless, and transceiver projects. This 900 MHz device delivers approximately 1 watt of RF power with 58% efficiency, making it ideal for portable communication systems, together with low noise figure and high gain. Its thermally enhanced 8-pin SO package ensures superior thermal management and durability in demanding environments. Designed for applications like GSM, ISM, paging, and PD modes, this transistor simplifies circuit design by eliminating bias inverters and drain switches, thereby improving energy efficiency and system performance. Secure your supply now and ensure reliable, efficient wireless communication.
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