The 2N5682 is an NPN silicon epitaxial planar transistor suitable for use as a driver in high-power transistor applications, including general-purpose amplifiers and switching circuits. It offers a collector-emitter voltage of up to 120V, a maximum collector current of 1A, and a power dissipation of 10W. Designed in a TO-39 package, this transistor ensures reliable performance under high-temperature conditions with a junction temperature range of -65°C to +200°C. Its electrical characteristics include a transition frequency of 30MHz and a high DC current gain, making it essential for efficient power switching and amplification processes.
Dimensions: Length 8.5–9.39mm, Width 7.74–8.5mm, Height 6.09–6.6mm, Various other measurements detailed in datasheet
Buy the Buy multicomp® NPN Transistor Part Number 2N5682 Online
Purchase the multicomp 2N5682 high-power NPN transistor online today for superior performance in amplification and switching applications. Designed in a rugged TO-39 package, this transistor handles collector-emitter voltages of up to 120V and currents up to 1A, making it ideal for high-power circuits. Its high junction temperature capacity of +200°C and dissipation ratings ensure durability and efficiency. Whether used in general-purpose amplifiers or switching circuits, this device provides reliable operation with a transition frequency of 30MHz and high DC current gain, perfect for demanding electronic projects.
Get multicomp 2N5682 today—built for high power switching and reliable performance in amplifier and circuit driver applications.
Frequently Asked Questions
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You can download the 2N5682 datasheet or visit the MULTICOMP PRO website for support.
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