The DN2535N3-G is an N-channel depletion-mode vertical DMOS FET built with an advanced vertical DMOS structure and manufactured using Supertex's reliable silicon-gate process. This device combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient typical of MOSFETs. It is inherently resistant to thermal runaway and secondary breakdown, ensuring reliable operation. The normally-on, low threshold voltage DMOS FET is ideal for a wide range of switching and amplification applications that require high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds. Key features include low ON-resistance, immunity from secondary breakdown, and low leakage currents.
Order the Supertex DN2535 now for robust performance in industrial switching, amplifiers, and power supply circuits. Featuring high voltage capacity, low ON-resistance, and fast switching speeds, this N-channel depletion-mode MOSFET is ideal for engineers and technicians seeking reliable, high-efficiency components. With advanced vertical DMOS technology, it ensures minimal energy loss and thermal stability, making it suitable for demanding applications. Purchase online today to benefit from quick delivery, quality assurance, and competitive prices, ensuring your project’s success with trusted technology.
You can click on the BUY or RFQ button to purchase DN2535N3G from an authorized Microchip Technology distributor.
You can download the DN2535N3G datasheet or visit the Microchip Technology website for support.
Microchip Technology