The Microchip VN2460N3-G is a vertical DMOS FET designed for a wide range of switching and amplifying applications. Utilizing a silicon-gate manufacturing process, this device combines the power handling capabilities of bipolar transistors with the high input impedance and positive temperature coefficient of MOS devices. It's ideal for motor controls, converters, amplifiers, power supply circuits, and drivers for relays, solenoids, and lamps, where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are critical. The VN2460N3-G is free from thermal runaway and thermally induced secondary breakdown, ensuring reliable performance.
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You can download the VN2460N3G datasheet or visit the Microchip Technology website for support.
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