myMectronic
myMectronic

A Premier B2B Part Search

NXP AFT05MP075NR1 Broadband RF Power Transistor

The AFTOSMPO75NR1 is a broadband RF power LDMOS transistor designed for mobile two-way radio applications across 136 to 520 MHz. It features high gain, ruggedness, and broadband performance, making it ideal for large-signal amplifier applications. Capable of delivering 70 W output at 12.5 V with exceptional thermal management and integrated ESD protection, this device supports wideband operation with full power across the band, suitable for VHF and UHF mobile radio output stages, ensuring reliable performance in demanding environments.

Authorized Distributors
Source:Newark
Part No:AFT05MP075NR1
Stock:479
Inv Date:06-09-2026
Price: Unit price: $52.02
Buy/RFQ:
Source:DigiKey
Part No:AFT05MP075NR1
Stock:2494
Inv Date:06-09-2026
Price: Unit price: $62.14
Buy/RFQ:
Source:DigiKey
Part No:AFT05MP075NR1
Stock:2000
Inv Date:06-09-2026
Price: Unit price: $43.1661
Buy/RFQ:
Part No:AFT05MP075NR1
Stock:8
Inv Date:06-10-2026
Price: Unit price: $62.14
Buy/RFQ:
Part No:AFT05MP075NR1
Stock:0
Inv Date:06-09-2026
Price: Unit price: $17.57
Buy/RFQ:

NXP AFT05MP075NR1 Broadband RF Power Transistor Specifications:

  • Frequency Range: 136 to 520 MHz
  • Output Power: 70 W
  • Voltage: 12.5 V
  • Drain-Source Voltage: 0.5 to +40 V
  • Gate-Source Voltage: -6.0 to +12 V
  • Storage Temperature Range: -65 to +150°C
  • Operating Temperature Range: -40 to +150°C
  • Maximum Total Device Dissipation: 690 W
  • Thermal Resistance, Junction to Case: 0.29°C/W
  • ESD Protection: Human Body Model (2500 V), Machine Model (250 V), Charge Device Model (2000 V)
  • Electrical Characteristics: Gate Threshold 17-25 V, Drain-Source On-Voltage ~0.14 V, Transconductance 73 S
  • Frequency Performance: Typical Gain at 450-520 MHz ~14-21 dB, Drain Efficiency ~65-69%

Buy the Buy Freescale AFTOSMPO75NR1 Broadband RF Power Transistor Part Number AFT05MP075NR1 Online

Order the Freescale AFTOSMPO75NR1 broadband RF power transistor online today. This high ruggedness device offers 70 W output power, full band operation from 136 to 520 MHz, and excellent thermal performance. Designed for VHF and UHF mobile radio output stages, it ensures reliable high power amplification with integrated ESD protection and wide operating temperature. Perfect for demanding communication systems, this transistor guarantees durability and consistent high performance in various mobile radio applications. Purchase now for guaranteed quality and fast shipping.

Buy Freescale AFTOSMPO75NR1 now and experience unmatched reliability and high power performance for mobile radio applications.

Frequently Asked Questions

Where can I buy NXP AFT05MP075NR1?

You can click on the BUY or RFQ button to purchase AFT05MP075NR1 from an authorized NXP distributor.

How do I troubleshoot issues or seek technical support for part AFT05MP075NR1?

You can download the AFT05MP075NR1 datasheet or visit the NXP website for support.

Who is the manufacturer of AFT05MP075NR1?

NXP

NXP Part List

Browse and search other NXP parts, locate datasheets and stock

Sponsored by