The BFU730LX is an NPN wideband silicon germanium RF transistor designed for high-speed, low noise microwave applications in compact SMD packages. It features a low noise figure of 0.75 dB at 6 GHz, high maximum power gain of 15.8 dB, and excellent linearity suitable for WiFi, WLAN, WiMAX, GPS, and microwave communication systems. The transistor's ultra-small 1.0 x 0.6 x 0.34 mm package makes it ideal for space-constrained RF designs requiring high gain and low noise performance at microwave frequencies.
Package: SOT883C ultra small plastic package, 1.0 x 0.6 x 0.34 mm
Collector-Base Voltage: 10.0 V
Collector-Emitter Voltage: 3.0 V
Emitter-Base Voltage: 1.3 V
Collector Current: 5 to 30 mA
Total Power Dissipation: 160 mW at Tsp<110°C
DC Current Gain (hFE): 205 to 555
Transition Frequency: 53 GHz at 25 mA
Maximum Power Gain: 15.8 dB at 6 GHz
Noise Figure: 0.75 dB at 6 GHz
Output Power at 1 dB Compression: -7 to -16 dBm
Input third-order intercept point (IP3): 15 dBm
Collector Breakdown Voltage (VBC): 10 V
Collector-Emitter Breakdown Voltage (VCE): 3 V
Buy the Buy NXP BFU730LX Part Number BFU730LXZ Online
Order the NXP BFU730LX high-performance microwave transistor online today. Designed for low noise, high gain, and excellent linearity, it's ideal for WiFi, WLAN, GPS, and microwave communication systems. Its small SMD package allows for space-efficient designs in complex RF modules and systems. With specifications supporting frequencies up to 53 GHz and power gains of 15.8 dB, this transistor ensures reliable and efficient operation in critical RF applications. Improve your system performance with this advanced RF component now.
Get NXP BFU730LX transistor today—optimized for high gain, low noise microwave amplification in compact RF modules.
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