The high ruggedness RF power transistor operates across 1.8 to 600 MHz, delivering 150 W CW at 50 V. Designed for industrial, broadcast, aerospace, and land mobile use, it features wide frequency utilization, unmatched input/output performance, integrated stability, low thermal resistance, and ESD protection. The device supports high VSWR, with extensive performance in broadband reference circuits, optimized for high-power RF applications with ruggedness and reliability at the core. It is packaged in a TO-270 wide-body gull wing case, suitable for demanding environments.
NXP MRFE6VP5150NR1 RF Power Transistor Specifications:
Frequency Range: 1.8-600 MHz
Output Power: 150 W CW at 50 V
Drain-Source Voltage: -0.5 to +133 V
Gate-Source Voltage: 6.0 to +10 V
Storage Temperature Range: -65°C to +150°C
Case Operating Temperature: -40°C to +150°C
Junction Temperature: -40°C to +225°C
Total Device Dissipation: 952 W at 25°C
Thermal Resistance, Junction to Case: 0.21°C/W
Thermal Impedance, Junction to Case: 0.04
ESD Protection: Human Body Model 2500 V, Machine Model 250 V
Certifications: RoHS Compliant
Package: TO-270 Wide Body Gull Wing
Peak RF Power: 150 W
Frequency Utilization: 1.8 to 600 MHz
Input/Output Impedance: 50 Ohm system
Harmonic Suppression: > -39.8 dB at 200 MHz
Buy the Freescale MRFE6VP5150NR1 – Reliable RF Power Transistor for Industrial Applications
Enhance your RF system with the reliable high ruggedness RF power transistor capable of delivering 150 W CW across a broad frequency range from 1.8 to 600 MHz. Designed for industrial, broadcast, aerospace, and mobile applications, it features robust performance with unmatched input/output design, integrated stability, and high VSWR tolerance. Enclosed in a durable TO-270 gull wing package, this transistor ensures operational stability, low thermal resistance, and comprehensive ESD protection, making it an ideal choice for demanding high-power RF amplification projects.
Order your Freescale SeriesMRFE6VP5150NR1 today and give your projects the dependable quality they deserve, suitable for high-power RF amplification with rugged design.
Frequently Asked Questions
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