Broadband RF Power MOSFETs designed for Class A and Class AB base station applications operating up to 1500 MHz. Capable of handling 10:1 VSWR at 960 MHz with 10 Watts PEP output, 18 dB power gain, and 32% drain efficiency. Features include on-chip RF feedback, integrated ESD protection, RoHS compliance, and plastic package capable of 225°C. Suitable for analog/digital modulation and multicarrier amplifiers with high reliability and broadband stability, making them ideal for wireless communication infrastructure.
Purchase the Freescale MW6S010NR1 broadband RF power MOSFET online now to ensure your wireless infrastructure features high power, excellent efficiency, and broadband stability. Designed for base station applications up to 1500 MHz, this 10 W PEP device offers 18 dB gain, 32% drain efficiency, and includes on-chip RF feedback and integrated ESD protection. Its rugged plastic package withstands operating temperatures up to 225°C, providing reliable service for analog and digital modulation, multicarrier amplifiers, and high-frequency communication systems. Get yours today for superior performance and verified quality ideal for advanced wireless networks.
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You can download the MW6S010NR1 datasheet or visit the NXP website for support.
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