The 1N459A is a small signal diode designed for high-speed switching and rectification applications. It features a maximum repetitive reverse voltage of 200 V, a forward voltage of approximately 1.0 V at 3 mA, and a reverse leakage current of just 25 nA at 75 V and 150°C. Its junction temperature can operate up to 175°C, and it dissipates power up to 500 mW. Suitable for low current, high-voltage circuits, this diode provides reliable performance in a compact DO-35 package for various electronic applications.
ONSEMI 1N459ATR Small Signal Diode Specifications:
Maximum Repetitive Reverse Voltage: 200 V
Average Rectified Forward Current: 500 mA
Pulse Peak Forward Surge Current (1 sec): 1.0 A
Peak Forward Surge Current (microsecond): 4.0 A
Storage Temperature Range: -65 to +200 °C
Operating Junction Temperature: 175 °C
Power Dissipation: 500 mW
Thermal Resistance, Junction to Ambient: 300 °C/W
Breakdown Voltage: 200 V
Forward Voltage: 1.0 V at 3 mA
Reverse Leakage Current: 25 nA at 75 V, 150°C
Total Capacitance: 6.0 pF at 0 V, 1 MHz
Buy the Buy ON Semiconductor 1N459A Small Signal Diode Part Number 1N459ATR Online
Purchase the ON Semiconductor 1N459A small signal diode online today for high-speed switching and reliable rectification in your electronic projects. With a maximum reverse voltage of 200 V, a forward voltage of 1.0 V at 3 mA, and low reverse leakage current, this diode ensures efficient performance even in demanding applications. Its compact DO-35 package makes it ideal for space-constrained designs. Designed for high-speed switching, it offers excellent thermal stability, high reliability, and long-lasting durability. Shop now to enhance your circuit performance with this trusted component.
Get ON Semiconductor 1N459A small signal diode today—designed for high-speed rectification, reliable performance, and low leakage current in compact circuits.
Frequently Asked Questions
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You can download the 1N459ATR datasheet or visit the ONSEMI website for support.
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ONSEMI
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