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ONSEMI MJE253G Power Transistor

The MJE253G is a PNP complementary silicon power transistor designed for high-speed switching and low power amplifier applications. It offers a maximum collector-emitter voltage of 100V and power dissipation of 15W, ensuring reliable performance in various electronic circuits. Features include high collector-emitter sustain voltage, high DC current gain, and low saturation voltage, making it suitable for switching and amplification tasks. Its Pb-Free, RoHS-compliant construction ensures environmental safety and durability, with robust thermal and electrical characteristics for efficient operation in power electronics.

Authorized Distributors
Source:Newark
Part No:MJE253G
Stock:1104
Inv Date:06-10-2026
Price: Unit price: $1.32
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Source:Newark
Part No:MJE253G.
Stock:884
Inv Date:06-10-2026
Price: Unit price: $0.491
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Source:DigiKey
Part No:MJE253G
Stock:16057
Inv Date:06-10-2026
Price: Unit price: $1.22
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Part No:MJE253G
Stock:8874
Inv Date:06-11-2026
Price: Unit price: $1.22
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Part No:MJE253G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.71
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Part No:MJE253G
Stock:6000
Inv Date:06-10-2026
Price: Unit price: $0.3871
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Part No:MJE253G
Stock:6000
Inv Date:06-10-2026
Price: Unit price: $0.3871
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Part No:MJE253G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.3
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Source:Arrow EU
Part No:MJE253G
Stock:500
Inv Date:06-11-2026
Price: N/A
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ONSEMI MJE253G Power Transistor Specifications:

  • Collector-Emitter Voltage: 100 V
  • Collector-Base Voltage: 100 V
  • Emitter-Base Voltage: 7.0 V
  • Collector Current - Continuous: 4.0 A
  • Collector Current - Peak: 8.0 A
  • Base Current: 1.0 A
  • Total Power Dissipation: 15 W at Tc=25°C
  • Derate above 25°C: 120 mW/°C
  • Operating Junction Temperature: -65°C to +150°C
  • Thermal Resistance, Junction-to-Case: 8.34 °C/W
  • Thermal Resistance, Junction-to-Ambient: 83.4 °C/W
  • Case Package: TO-225
  • RoHS Compliant and Pb-Free
  • Maximum Storage Temperature: -65°C to +150°C
  • Transition Frequency: 40 MHz
  • Capacitance Output: 50 pF at 10 Vdc

Buy the Buy ON Semiconductor MJE253G Part Number MJE253G Online

Order the ON Semiconductor MJE253G power transistor online today for reliable switching and amplification performance. Designed for high voltage and current capacity, this Pb-Free, RoHS-compliant device features a maximum collector-emitter voltage of 100V and power dissipation of 15W, ensuring robust operation. It offers high DC current gain and low saturation voltage, ideal for power electronics and switching circuits. Easy to integrate into your design, this transistor guarantees long-term durability, efficiency, and environmental safety through its compliant construction. Shop now to enhance your power management solutions with this high-quality component.

Get ON Semiconductor MJE253G today—built for high-speed switching, low saturation voltage, and long-lasting durability in power applications.

Frequently Asked Questions

Where can I buy ONSEMI MJE253G?

You can click on the BUY or RFQ button to purchase MJE253G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MJE253G?

You can download the MJE253G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MJE253G?

ONSEMI

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