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ONSEMI 2N5195G Silicon PNP Power Transistor
The ONSEMI 2N5195G is a silicon PNP power transistor specifically engineered for use in power amplifier and switching circuits. Its design incorporates excellent safe area limits, ensuring reliable performance under demanding conditions. This device is Pb-Free and RoHS Compliant, aligning with environmental standards. It serves as a complement to the NPN transistors 2N5191 and 2N5192, making it suitable for a wide range of applications requiring robust power handling capabilities. The 2N5195G is packaged in a TO-225 format, facilitating easy integration into various circuit designs.
ONSEMI 2N5195G Silicon PNP Power Transistor Specifications:
- Collector−Emitter Voltage: 60-80 Vdc
- Collector−Base Voltage: 60-80 Vdc
- Emitter−Base Voltage: 5.0 Vdc
- Collector Current: 4.0 Adc
- Base Current: 1.0 Adc
- Total Device Dissipation: 40 W
- Derate above 25°C: 320 W/°C
- Operating and Storage Junction Temperature Range: –65 to +150 °C
- Thermal Resistance, Junction−to−Case: 3.12 °C/W
- Collector−Emitter Sustaining Voltage: 60-80 Vdc
- Collector Cutoff Current: ≤ 1.0 mAdc
- Collector Cutoff Current (VCE= 60 Vdc, VBE(off)= 1.5 Vdc): ≤ −0.1 mAdc
- Emitter Cutoff Current: ≤ 1.0 mAdc
- DC Current Gain: 25-100
- Collector−Emitter Saturation Voltage: 0.6-1.4 Vdc
- Base−Emitter On Voltage: ≤ 1.2 Vdc
- Current−Gain − Bandwidth Product: ≥ 2.0 MHz
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Frequently Asked Questions
Where can I buy ONSEMI 2N5195G?
You can click on the BUY or RFQ button to purchase 2N5195G from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part 2N5195G?
You can download the 2N5195G datasheet or visit the ONSEMI website for support.
Who is the manufacturer of 2N5195G?
ONSEMI