The 2SB1201/2SD1801 are high-performance bipolar transistors designed for applications such as voltage regulators, relay drivers, lamp drivers, and electrical equipment. Featuring low collector-to-emitter saturation voltage, large current capacitance, wide safe operating area, and fast switching speed, these transistors adopt FBET and MBIT processes for enhanced reliability. Their compact, slim packages facilitate smaller set designs, making them ideal for space-constrained electronic circuits requiring high current gain and efficient switching capabilities.
Saturation Voltage (VCE(sat)): 0.15–0.30 V at Ic=1A
Base-to-Emitter Saturation Voltage: Typical 0.7 V
Transition Time (turn-on): 60 ns
Fall Time: 30 ns
Package Type: TP or TP-FA, TO-251, TO-252
Buy the Buy ON Semiconductor Bipolar Transistor Part Number 2SB1201S-TL-E Online
Purchase ON Semiconductor bipolar transistors today for reliable performance in voltage regulation, relay control, and electrical equipment. These high-quality devices feature low saturation voltage, fast switching speed, and compact packages suitable for space-constrained designs. Designed with FBET and MBIT processes, they offer large current capacitance and wide safe operating areas, ensuring long-lasting durability and consistent operation in various electronic circuits. Make your electronic system smaller, more efficient, and reliable by ordering these top-grade transistors online now.
Get ON Semiconductor 2SB1201S-TL-E today—engineered for high current capacity, fast switching, and space-efficient applications.
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