The MJ11028G is a high-performance NPN Darlington power transistor ideal for general-purpose amplifier applications. It features monolithic construction with a built-in base-emitter shunt resistor, high DC current gain of 1000 at 25A, and diode protection for rated collector current, ensuring reliable operation. Designed for industrial and power management uses, it handles collector-emitter voltages up to 60V, with a collector current of 50A continuous, peak 100A, and power dissipation of 300W at 25°C. The device supports junction temperatures up to 200°C and features Pb-free packaging options for environmentally conscious design.
Discover the reliable performance of the High Current Power Transistor. Designed for industrial and amplifier applications, it offers high DC gain, robust protection, and a maximum collector-emitter voltage of 60V. With a continuous collector current of 50A and peak of 100A, it handles high power dissipation up to 300W at 25°C. Its monolithic construction includes built-in resistors for enhanced reliability and efficiency. Environmentally friendly Pb-free packages are available, ensuring compliance with green standards. Perfect for power supply and industrial automation use.
You can click on the BUY or RFQ button to purchase MJ11028G from an authorized ONSEMI distributor.
You can download the MJ11028G datasheet or visit the ONSEMI website for support.
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