The BC856BM3T5G is a PNP silicon general purpose transistor designed for amplifier applications. Housed in the compact SOT-723 surface-mount package, it features collector-emitter voltage up to -65 V and collector-base voltage up to -80 V, suitable for low-power circuits. It handles up to -100 mA collector current and offers a typical DC current gain of 220 to 290 at 25°C. The device provides a low saturation voltage, making it ideal for switching and amplification in various electronic devices, with robust thermal and electrical characteristics.
ONSEMI BC856BM3T5G General Purpose Transistor Specifications:
Collector-Emitter Voltage: -65 V
Collector-Base Voltage: -80 V
Emitter-Base Voltage: 5.0 V
Collector Current: -100 mA
Total Device Dissipation: 265 mW at 25°C
Thermal Resistance Junction to Ambient: 470 °C/W
Operating Temperature Range: -55°C to +125°C
Package: SOT-723
Maximum Lead Thickness Includes Lead Finish
Case Dimensions: Millimeters with Controlling Dimensions in mm
Breakdown and Storage Temperatures: -55°C to +150°C
Electrical Characteristics include low collector cutoff current, high current gain, saturation voltages, and capacitance for switching and amplification tasks
Buy the ON Semiconductor BC856BM3 Reliable PNP Silicon Transistor for Industrial Applications
Order the ON Semiconductor BC856BM3 transistor online today to optimize your electronic designs. Known for dependable performance, high current gain, and efficient switching capabilities, this PNP silicon device in compact SOT-723 package is perfect for amplifier and switching circuits. Its low saturation voltage and wide temperature range make it suitable for various industrial and consumer electronics. Secure your supply now for quality, reliability, and easy integration into your projects, ensuring excellent performance across all applications.
Buy ON Semiconductor BC856BM3 transistor now and experience unmatched reliability and performance in low-power amplifier and switching applications.
Frequently Asked Questions
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