The MMBTA63LT1G is a PNP silicon Darlington transistor designed for automotive and industrial applications, providing high current gain and reliable switching. Qualified under AEC-Q101 standards, it features Pb-Free, Halogen-Free, and RoHS compliance, making it environmentally friendly. Suitable for control and amplification tasks, this device operates within a maximum collector-emitter voltage of -30 V and a collector current of -500 mA with thermal resistances tailored for efficient heat dissipation. Its compact SOT-23 package ensures easy integration into various electronic circuits, offering robust performance in demanding environments.
Total Device Dissipation (Pp): 225 mW at 25°C on FR-5 board
Derate above 25°C: 18 mW/°C
Junction-to-Ambient Thermal Resistance: 556 °C/W
Total Device Dissipation (Alumina): 300 mW at 25°C
Derate above 25°C: 24 mW/°C
Junction Temperature Range: -85°C to +150°C
Package: SOT-23, TO-236
Maximum Lead Thickness Includes Finish
Lead Spacing and Dimensions as per industry standards
RoHS compliant, Pb-Free, Halogen-Free
Buy the Buy ON Semiconductor PNP Darlington Transistor Part Number MMBTA63LT1G Online
Order the ON Semiconductor PNP Darlington transistor in SOT-23 package online today. Designed for automotive and industrial control systems, it offers high current gain up to 20,000 and excellent thermal performance. Its RoHS compliance and Pb-Free construction ensure environmental safety. With a maximum collector-emitter voltage of -30 V and a continuous collector current of -500 mA, this device guarantees reliable operation in rigorous environments. Perfect for amplification and switching tasks, it is easy to install and integrate into your electronic designs, ensuring long-lasting durability and precision performance.
Get ON Semiconductor MMBTA63LT1G today—built for high current gains and reliable switching in demanding automotive and industrial applications.
Frequently Asked Questions
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