The BD13816STU is a PNP epitaxial silicon transistor designed for medium power linear and switching applications. As a complementary bipolar transistor to the BD137 NPN, it operates efficiently within a temperature range of -55°C to 150°C. Suitable for power management, industrial control, and switching circuits, this device features collector-to-emitter voltage ratings of -80 V and -60 V depending on specific models, collector current of 1.5 A (DC) with pulse capacity of -3.0 A, and a junction temperature of 150°C. Its compact TO-126 package ensures reliable performance in demanding environments.
Purchase the ON Semiconductor BD13816STU PNP transistor online for your industrial or power management projects. Engineered for high reliability and efficiency, this medium power transistor operates within a temperature range of -55°C to 150°C. Its collector-to-emitter voltage ratings of -80 V and -60 V, combined with a collector current of 1.5 A and pulse capacity of -3.0 A, make it ideal for switching and linear applications. Secure prompt delivery and high-quality verified parts directly from authorized distributors online.
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You can download the BD13816STU datasheet or visit the ONSEMI website for support.
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