The BD676G is a silicon PNP bipolar Darlington transistor designed for medium power applications. It features high DC current gain and is suitable for use as an output device in complementary general-purpose amplifier circuits. The transistor has a monolithic construction, with collector-base voltage of 45V and emitter-base voltage of 5V. It is commonly used in industrial applications.
You can click on the BUY or RFQ button to purchase BD676G from an authorized ONSEMI distributor.
You can download the BD676G datasheet or visit the ONSEMI website for support.
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