The BDX33B and BDX33C (NPN) along with BDX34B and BDX34C (PNP) are high-performance Darlington complementary silicon power transistors designed for low-speed switching and general-purpose applications. Featuring high DC current gain of approximately 2500, these devices support collector-emitter voltages up to 80V or 100V, respectively. They include built-in base-emitter shunt resistors, are Pb-Free, RoHS compliant, and capable of dissipating up to 65W. Suitable for power switching in various industrial and electronic systems, these transistors ensure reliable operation with excellent thermal stability and safety margins.
Power Dissipation: 65W maximum, derate 0.56W/°C above 25°C
Operating Junction Temperature: -65°C to +150°C
Thermal Resistance, Junction-to-Case: 1.78°C/W
High DC Current Gain: hpg ≈ 2500 at I_c = 4.0A
Built-in Base-Emitter Shunt Resistors
Pb-Free and RoHS Compliant
Package: TO-220, Style 1, 221A
Buy the ON Semiconductor Series Darlington Power Transistor: BDX33BG
Purchase the ON Semiconductor Series Darlington Power Transistor BDX33BG today to enhance your electronic and industrial systems with reliable high-voltage power switching. Designed for low-speed switching applications, this device features high current gain, built-in resistors, and efficient thermal performance. Its robust construction supports continuous operation at up to 80V or 100V collector-emitter voltages, with a maximum power dissipation of 65W. Ideal for power control, automation, and industrial systems, ensuring dependable operation and safety margins for your projects.
Order your ON Semiconductor Series Darlington Power Transistor BDX33BG today and benefit from reliable high-voltage power switching in your electronic projects.
Frequently Asked Questions
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You can download the BDX33BG datasheet or visit the ONSEMI website for support.
Who is the manufacturer of BDX33BG?
ONSEMI
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