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ONSEMI BU406G NPN Power Transistor

High voltage, high-speed NPN power transistors ideal for CRT and TV horizontal deflection output stages. Featuring low saturation voltage, and RoHS-compliant Pb-free construction, these devices handle collector-emitter voltages up to 200V for BU406 and 150V for BU407, with collector currents up to 7A and dissipation of 60W. Suitable for applications requiring fast switching, high voltage tolerance, and reliable operation in power amplifiers and deflection circuits. Thermal resistance junction-to-ambient is 70°C/W, and junction-to-case is 2.08°C/W.

Authorized Distributors
Source:Newark
Part No:BU406G
Stock:1916
Inv Date:06-11-2026
Price: Unit price: $2.29
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Source:DigiKey
Part No:BU406G
Stock:1343
Inv Date:06-11-2026
Price: Unit price: $2.77
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Part No:BU406G
Stock:2838
Inv Date:06-12-2026
Price: Unit price: $2.3
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Part No:BU406G
Stock:1100
Inv Date:06-11-2026
Price: Unit price: $1.082
Buy/RFQ:
Part No:BU406G
Stock:1100
Inv Date:06-11-2026
Price: Unit price: $1.082
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Part No:BU406G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.65
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Source:Arrow EU
Part No:BU406G
Stock:5850
Inv Date:06-12-2026
Price: N/A
Buy/RFQ:

ONSEMI BU406G NPN Power Transistor Specifications:

  • Collector-Emitter Voltage BU406 200 V, BU407 150 V
  • Collector-Emitter Voltage (Voev) BU406 400 V, BU407 330 V
  • Collector-Base Voltage BU406 400 V, BU407 330 V
  • Emitter-Base Voltage 6 V
  • Collector Current - Continuous 7 Adc
  • Collector Peak Repetitive 10 Adc
  • Collector Peak (10 ms) 15 Adc
  • Base Current 4 Adc
  • Total Device Dissipation 60 W
  • Thermal Resistance Junction-to-Case 2.08 °C/W
  • Thermal Resistance Junction-to-Ambient 70 °C/W
  • Maximum Lead Temperature for Soldering 260 °C
  • Operating and Storage Junction Temperature Range -65 to 150 °C
  • Switching Crossover Time 0.75 μs
  • Dimensions following TO-220 package standard
  • Pb-Free and RoHS compliant, suitable for high power switching applications

Buy the Buy ON Semiconductor NPN Power Transistor Part Number BU406G Online

Order the ON Semiconductor BU406G power transistor online today for high voltage and fast switching applications in CRTs and television deflection outputs. Featuring low saturation voltage, high collector current capacity, and RoHS compliance, this device offers robust performance for power amplifier and deflection circuits. Its thermal characteristics, including junction-to-ambient resistance of 70°C/W, ensure efficient heat dissipation. Perfect for technicians and engineers, this reliable NPN transistor ensures long-lasting durability and precise operation in demanding electronic systems, making it easy to integrate into your project now.

Get ON Semiconductor BU406G today—built for high voltage, fast switching, and reliable power transistors in CRT and TV deflection circuits.

Frequently Asked Questions

Where can I buy ONSEMI BU406G?

You can click on the BUY or RFQ button to purchase BU406G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part BU406G?

You can download the BU406G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of BU406G?

ONSEMI

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