The high-voltage N-Channel SupreMOS MOSFET is designed with advanced super-junction technology utilizing deep trench filling, delivering low Rsp on-resistance and excellent switching performance. With a drain-source voltage of 600 V and continuous drain current of 34.9 A at 25°C, it is ideal for high-frequency power converters such as solar inverters, power supplies, and industrial applications. Its rugged construction and ultra-low gate charge of 86 nC ensure reliable operation, high efficiency, and system robustness. Repeated avalanche tested and RoHS compliant, it meets demanding industry standards.
Thermal Resistance, Junction to Ambient: Max 40°C/W
Operating and Storage Temperature Range: -55°C to +150°C
Gate Charge: 86 nC at 10 V
Output Capacitance, Coss: 338 pF, typ.
Output Capacitance, Vos: 145 to 195 pF
Switching Rise Time: 17 to 44 ns
Safe Operating Area: Max drain current varies with case temperature, up to 108 A pulsed
Package: TO-3PN, 30 units per reel
Buy the Buy ON Semiconductor SupreMOS Part Number FCA36N60NF Online
Purchase the ON Semiconductor FCA36N60NF high-voltage N-Channel MOSFET online today to ensure high efficiency and dependable power switching in your applications. This advanced SupreMOS device features a drain-source voltage of 600 V, continuous drain current up to 34.9 A, and low gate charge of 86 nC, making it ideal for solar inverters, AC-DC power supplies, and industrial power converters. Its rugged construction, Repeated Avalanche testing, and RoHS compliance guarantee long-term reliability and performance in demanding environments. Shop now to enhance your system’s efficiency!
Buy ON Semiconductor FCA36N60NF now and experience unmatched reliability and high-voltage switching performance for power conversion and industrial systems.
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