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ONSEMI FCH040N65S3F155 High-Voltage MOSFET

SuperFET III MOSFET is a high-voltage, low on-resistance power transistor designed for efficient switching in power supply systems. It features a 650 V drain-to-source voltage, 65 A continuous drain current, and ultra-low gate charge of 136 nC, making it ideal for telecom, industrial, UPS, and solar power applications. Its advanced charge balance technology ensures high performance even at extreme dv/dt rates, enabling miniaturization and energy efficiency. Suitable for various power systems, it’s built with robust construction to withstand harsh operating environments while providing outstanding switching characteristics and low conduction losses.

Authorized Distributors
Source:Newark
Part No:FCH040N65S3-F155
Stock:650
Inv Date:06-10-2026
Price: Unit price: $16.97
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Source:DigiKey
Part No:FCH040N65S3-F155
Stock:873
Inv Date:06-11-2026
Price: Unit price: $14.18
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Part No:FCH040N65S3-F155
Stock:71
Inv Date:06-11-2026
Price: Unit price: $14.18
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Part No:FCH040N65S3-F155
Stock:0
Inv Date:06-10-2026
Price: Unit price: $10.56
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Source:Arrow EU
Part No:FCH040N65S3-F155
Stock:450
Inv Date:06-11-2026
Price: N/A
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ONSEMI FCH040N65S3F155 High-Voltage MOSFET Specifications:

  • Drain to Source Voltage: 650 V
  • Gate to Source Voltage: ±30 V
  • Continuous Drain Current: 65 A at 25°C, 41 A at 100°C
  • Pulsed Drain Current: 162.5 A
  • Avalanche Energy: 368 mJ
  • Repetitive Avalanche Energy: 447 mJ
  • Rds(on): 2.5 to 354 mΩ (typical 40 mΩ) at Vgs = 10 V
  • Gate Charge (total): 136 nC at Vgs = 10 V
  • Output Capacitance (Coss): 120 pF
  • Thermal Resistance Junction to Case: 0.3 °C/W
  • Thermal Resistance Junction to Ambient: 40 °C/W
  • Operating Temperature Range: -55°C to +150°C
  • Maximum Power Dissipation: 7 W at 26°C
  • Gate Threshold Voltage: 25 to 45 V
  • Switching Delay Time: 35 ns
  • Turn-On Rise Time: 51 ns
  • Turn-Off Delay Time: 95 ns
  • Body Diode Voltage: 1.2 V at 65 A
  • Maximum Lead Soldering Temperature: 300°C for 5 seconds

Buy the ON Semiconductor FCHO40N65S3 U+2013 Reliable High-Voltage MOSFET for Industrial Applications

Purchase ON Semiconductor FCHO40N65S3 today to enhance your power systems with a high-voltage, low on-resistance MOSFET designed for industrial, telecom, and solar applications. This robust device features a 650 V drain-to-source voltage, 65 A continuous drain current, and ultra-low gate charge, ensuring superior switching performance and energy efficiency. Easy to install and highly reliable, it is the perfect choice for miniaturized, high-performance power supply solutions. Leverage the advanced charge balance technology for improved overall system efficiency and durability in critical applications.

Get ON Semiconductor FCHO40N65S3 today—built for high efficiency, reliable switching, and extended durability in demanding power systems.

Frequently Asked Questions

Where can I buy ONSEMI FCH040N65S3F155?

You can click on the BUY or RFQ button to purchase FCH040N65S3F155 from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FCH040N65S3F155?

You can download the FCH040N65S3F155 datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FCH040N65S3F155?

ONSEMI

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