This compact integrated N-channel PowerTrench MOSFET and Schottky diode offers excellent switching performance for cellular handsets and ultra-portable devices. Featuring low on-resistance and a Schottky diode with low forward voltage, it supports boost circuitry with high efficiency. The MictoFET 2x2 package provides superior thermal management, enabling reliable operation in space-constrained applications. Suitable for DC-DC conversion, it combines a MOSFET with low Rds(on) and a Schottky diode rated for 20V, 2A, making it ideal for portable power management with enhanced durability.
Operating Junction Temperature Range: -55°C to +150°C
Repetitive Peak Reverse Voltage (Schottky): 20V
Average Forward Current (Schottky): 2A
RθJA Thermal Resistance, Junction to Ambient: 86°C/W (on a 2 oz copper pad), 173°C/W (minimum pad)
Package: MicroFET 2x2 mm
ESD Protection Level: >2kV (HBM)
Maximum ON Resistance at 4.5V Vgs: 68mΩ, at 2.5V Vgs: 86mΩ
Buy the Fairchild FDFMA2N028Z – Reliable PowerTrench MOSFET for Industrial Applications
Get the Fairchild FDFMA2N028Z integrated MOSFET and Schottky diode today for optimal power switching in cellular handsets and portable electronics. Its low on-resistance and high thermal performance make it ideal for boost topologies and DC-DC converters. This compact 2x2 mm package ensures reliable thermal management and efficient operation at 20V, 3.7A ratings. Perfect for designers seeking space-saving, durable power solutions, secure your supply chain and improve device efficiency by purchasing online now.
Order your Fairchild FDFMA2N028Z series high-efficiency power MOSFET and Schottky diode today and enhance your boost circuit designs with dependable performance in compact form.
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