The FCP190N65S3R0 is an N-channel SuperFET® Ill MOSFET rated at 650 V and 17 A, designed for high efficiency and miniaturization in power systems. It features ultra-low gate charge, low output capacitance, and is optimized for switching performance in computing, telecom, and industrial power supplies. This high-voltage MOSFET incorporates charge balance technology for reduced conduction losses, superior switching, and withstands extreme dV/dt conditions, making it suitable for demanding applications requiring reliable, efficient performance and compact form factors.
ONSEMI FCP190N65S3R0 High-Voltage Power MOSFET Specifications:
Drain to Source Voltage: 650 V
Gate to Source Voltage: ±80 V
Drain Current (continuous at 25°C): 17 A
Drain Pulsed Current: 42.5 A
Avalanche Energy: 76 mJ
Power Dissipation: 144 W
Operating Temperature Range: -55°C to +150°C
Thermal Resistance Junction to Case: 0.87 °C/W
Thermal Resistance Junction to Ambient: 62.5 °C/W
Gate Threshold Voltage: 25-45 V
Static Drain to Source On Resistance: 159-190 mΩ
Input Capacitance (Ciss): 1350 pF
Output Capacitance (Coss): 30 pF
Gate Charge (Qg): 33 nC
Switching Delay Time: 17 ns
Turn-On Delay Time: 17 ns
Turn-Off Delay Time: 42 ns
Package: TO-220
Peak Diode Recovery dv/dt: 20 V/μs
Buy the ON Semiconductor Series SuperFET Ill MOSFET: FCP190N65S3R0
Secure the ON Semiconductor FCP190N65S3R0 today for advanced power management. Designed for high voltage and low conduction loss, this MOSFET ensures superior switching performance for industrial, telecom, and computing power supplies. Its robust construction supports extreme dV/dt and high-temperature operation, making it ideal for miniaturized and efficient power systems. Purchase online now to benefit from fast delivery and reliable performance, ensuring your projects meet demanding efficiency, reliability, and compactness standards for modern electronic applications.
Buy ON Semiconductor FCP190N65S3R0 now and experience unmatched reliability and high efficiency in power switching applications.
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